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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2014-08-01
Tokyo Kikai-Shinko-Kaikan Bldg. B3-1 [Invited Talk] InGaAs MOSFET Source Structures Toward High Speed/low Power Applications
Yasuyuki Miyamoto, Toru Kanazawa, Yoshiharu Yonai, Atsushi Kato, Motohiko Fujimatsu, Masashi Kashiwano, Kazuto Ohsawa, Kazumi Ohashi (Tokyo Inst. of Tech.) ED2014-56
Abstract High on-currents (I_{on}) and low off-currents (I_{off}) under low supply voltage are important for logic appli... [more] ED2014-56
ED, SDM, CPM 2012-05-18
Aichi VBL, Toyohashi Univ. of Technol. High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa
Masashi Kashiwano, Jun Hirai, Shunsuke Ikeda, Motohiko Fujimatsu, Yasuyuki Miyamoto (TITech) ED2012-26 CPM2012-10 SDM2012-28
We fabricated a vertical metal-insulator-semiconductor feld-effect transistor (MISFET) with a heterostructure launcher a... [more] ED2012-26 CPM2012-10 SDM2012-28
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