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Committee Date Time Place Paper Title / Authors Abstract Paper #
MVE, ITE-HI, HI-SIG-VR 2013-06-25
15:35
Tokyo Sanjo Conference Hall, The University of Tokyo (Hongo campus) Construction and Trial Manufacture of the Module Framework for Electronic-work with Tablet Device
Masanori Ueda, Masahiko Kubara, Mamoru Endo, Masashi Yamada, Shinya Miyazaki (Chukyo Univ.), Kumiko Iwasaki (Kinjo Univ.), Takami Yasuda (Nagoya Univ.) MVE2013-11
In late years it became remarkable that a youth was not interested in technology. Therefore lack of engineer advances, a... [more] MVE2013-11
pp.29-32
MVE, HI-SIG-VR 2012-09-27
09:30
Hokkaido Two venues in Nemuro Examination of Evaluation Method for Comfortable Drinking Alcohol by the Coaster-type Device
Masanori Ueda, Masahiko Kubara, Makoto Ito, Mamoru Endo, Masashi Yamada, Shinya Miyazaki (Chukyo Univ.) MVE2012-28
Drinking may cause both good influence and bad influence to a human. For safe limits of alcohol consumption, it is impor... [more] MVE2012-28
pp.1-6
MVE 2012-05-15
15:10
Kanagawa   Development of the Coaster type Sensing Device for Supporting Comfortable Drinking
Masanori Ueda, Masahiko Kubara, Makoto Ito, Mamoru Endo, Masashi Yamada, Shinya Miyazaki (Chukyo Univ.) MVE2012-6
At the place of drinking, communication with a drinking partner is lively, and when we don't drink too much alcohol, we ... [more] MVE2012-6
pp.43-46
MVE, HI-SIG-VR 2011-10-14
15:15
Hokkaido   Development of Drunkenness Level Measuring Device using General-purpose Communication Protocol
Masanori Ueda, Masahiko Kubara, Makoto Ito, Mamoru Endo, Masashi Yamada, Shinya Miyazaki (Chukyo Univ.) MVE2011-52
Drinking may cause both good influence and bad influence to a human.
When the suitable amount of drinking was understo... [more]
MVE2011-52
pp.115-120
US 2010-09-29
15:15
Miyagi Tohoku Univ. Study of Correlation between SiO2 Film Properties and Temperature Coefficients of Frequency in SAW Devices with SiO2/LiNbO3 Structure
Satoru Matsuda, Michio Miura, Takashi Matsuda, Masanori Ueda, Yoshio Satoh (TAIYO YUDEN CO.,LTD.), Ken-ya Hashimoto (Grad. School of Eng., Chiba Univ.) US2010-53
In the temperature compensation SAW device with SiO2/LiNbO3 structure, SiO2 film properties (the peak width at half max... [more] US2010-53
pp.29-32
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