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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2011-11-17
Kyoto Katsura Hall,Kyoto Univ. Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures
Narihiko Maeda, Masanobu Hiroki, Satoshi Sasaki, Yuichi Harada (NTT) ED2011-83 CPM2011-132 LQE2011-106
In recessed-gate AlGaN/GaN Heterostructure field-effect transistors (HFETs) for E-mode operation, enhanced-barrier struc... [more] ED2011-83 CPM2011-132 LQE2011-106
ED, MW 2010-01-14
Tokyo Kikai-Shinko-Kaikan Bldg Compressively Strained InAlN/AlGaN/GaN FETs with Regrown AlGaN Contact Layers
Masanobu Hiroki, Narihiko Maeda, Naoteru Shigekawa (NTT Corp.) ED2009-187 MW2009-170
 [more] ED2009-187 MW2009-170
SDM, ED 2009-06-25
Overseas Haeundae Grand Hotel, Busan, Korea [Invited Talk] InAlGaN/AlGaN/GaN Heterosturcures Field Effect Transistors with Flat Surface and High Electron Mobility
Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi, Naoteru Shigekawa (NTT PH Labs.) ED2009-71 SDM2009-66
We report our recent development of an InAlN barrier layer for GaN-based FETs. We fabricated a novel structure consistin... [more] ED2009-71 SDM2009-66
ED 2009-06-11
Tokyo   Improvement in Device Performance in MIS AlGaN/GaN HFETs by Designing Insulator/AlGaN/GaN Structures
Narihiko Maeda, Masanobu Hiroki, Takatomo Enoki (NTT), Takashi Kobayashi (NTT AT) ED2009-42
To improve the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transist... [more] ED2009-42
LQE, ED, CPM 2008-11-28
Aichi Nagoya Institute of Technology Flat Surface and High Electron Mobility of InAlN/AlGaN/AlN/GaN Heterostructures
Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi (NTT) ED2008-180 CPM2008-129 LQE2008-124
We fabricated InxAl1-xN/Al0.38Ga0.62N/AlN/GaN hetero-structures with flat surfaces and high electron mobility. The densi... [more] ED2008-180 CPM2008-129 LQE2008-124
CPM, ED, SDM 2008-05-16
Aichi Nagoya Institute of Technology Al/Ti/Al Ohmic Contacts for AlGaN/GaN Heterostructures
Masanobu Hiroki, Kazumi Nishimura, Noriyuki Watanabe, Yasuhiro Oda, Takashi Kobayashi (NTT PH Lab.) ED2008-11 CPM2008-19 SDM2008-31
In this letter, we report annealing temperature dependence of Al/Ti/Tl/Ni/Au contact structure on AlGaN/GaN heterostruct... [more] ED2008-11 CPM2008-19 SDM2008-31
MW, ED 2007-01-19
Tokyo Kikai-Shinko-Kaikan Bldg. High-quality InAlN/GaN HEMT epi-wafer grown on Si (111) substrate by metalorganic chemical vapor deposition
Noriyuki Watanabe, Haruki Yokoyama, Masanobu Hiroki, Yasuhiro Oda (NTT), Takuma Yagi (NTT-AT), Takashi Kobayashi (NTT)
We successfully fabricated high-quality InAlN/GaN high electron mobility transistors (HEMTs) structure on Si(111) substr... [more] ED2006-233 MW2006-186
ED, MW 2006-01-19
Tokyo Kikai-Shinko-Kaikan Bldg. 0.15-mm-dual-gate AlGaN/GaN HEMT mixers
Kenji Shiojima, Takashi Makimura, Toshihiko Kosugi, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama (NTT)
 [more] ED2005-206 MW2005-160
LQE, ED, CPM 2005-10-13
Shiga Ritsumeikan Univ. Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs
Kenji Shiojima, Takashi Makimura, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama (NTT)
 [more] ED2005-127 CPM2005-114 LQE2005-54
MW, ED 2005-01-18
Tokyo   -
Narihiko Maeda, -, Takashi Makimura, Masanobu Hiroki, Toshiki Makimoto, Takashi Kobayashi, Takatomo Enoki (NTT)
 [more] ED2004-213 MW2004-220
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