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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2017-02-06
10:05		 Tokyo Tokyo Univ. [Invited Talk] Impact of Dry Process Damage on Chemical Mechanical Planarization with Cu/low-k Structure
Masako Kodera, Hiroyuki Yano, Naoto Miyashita (Toshiba) SDM2016-139		 We evaluated the impact of process damage caused by dry or sputtering on chemical mechanical planarization (CMP) with Cu... [more] SDM2016-139
pp.1-4
SDM 2010-02-05
16:15		 Tokyo Kikai-Shinko-Kaikan Bldg. Evaluation of Dielectric Constant through Direct CMP of Porous Low-k Film
Masako Kodera, T. Takahashi, G. Mimamihaba (Toshiba Corp.) SDM2009-191		 Nanoporous materials are utilized in current devices. However, their low-k value often alters during device fabrication.... [more] SDM2009-191
pp.53-58
ED 2008-06-13
15:20		 Ishikawa Kanazawa University Wet Cleaning Processing of VLSI Devices by Functional Waters
Masako Kodera, Yoshitaka Matsui, Naoto Miyashita (Toshiba) ED2008-27		 We applied functional waters that was generated by an electrolytic cell of de-ionized water (DIW) or by gas-injecting me... [more] ED2008-27
pp.29-34
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