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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, SDM |
2007-06-25 15:30 |
Overseas |
Commodore Hotel Gyeongju Chosun, Gyeongju, Korea |
Characterization of plasma etching effects on p-type GaN by capacitance measurements of Schottky diodes Masashi Kato, Kazuki Mikamo, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.) |
Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power de... [more] |
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ED, SDM |
2007-06-25 15:55 |
Overseas |
Commodore Hotel Gyeongju Chosun, Gyeongju, Korea |
Analysis of plasma etching damages in GaN by excess carrier lifetime measurements Masashi Kato, Keisuke Fukushima, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.) |
Gallium nitride (GaN) is a promising material for high power and high frequency devices, and the etching processes are n... [more] |
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SDM, ED, CPM |
2007-05-24 14:50 |
Shizuoka |
Shizuoka Univ. |
Analysis of plasma etching damages and characterization of annealing effects on GaN by excess carrier lifetime measurements Keisuke Fukushima, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs., Inc.) |
Gallium nitride (GaN) is promising for high power and high frequency devices, and the etching processes is necessary in ... [more] |
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SDM, ED, CPM |
2007-05-25 11:20 |
Shizuoka |
Shizuoka Univ. |
Characterization of plasma etching effects on GaN by electrical measurements of Schottky diodes Masashi Kato, Kazuki Mikamo, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs. Inc.) |
Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power de... [more] |
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