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 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
EMD, LQE, OPE, CPM, R 2014-08-22
11:10		 Hokkaido Otaru Economy Center Realization of GaAs1-xBix laser diodes with low temperature dependence of oscillation wavelength
Takuma Fuyuki, Kenji Yoshida, Ryo Yoshioka, Masahiro Yoshimoto (Kyoto Inst. Tech.) R2014-40 EMD2014-45 CPM2014-60 OPE2014-70 LQE2014-44		 The coherent epitaxial growth GaAs1－xBix (x = 9.5%) films on GaAs substrate with high optical quality was achieved grown... [more] R2014-40 EMD2014-45 CPM2014-60 OPE2014-70 LQE2014-44
pp.87-90
SDM 2012-12-07
14:00		 Kyoto Kyoto Univ. (Katsura) Depth analysis of ultra-shallow junctions by photoluminescence with the aid of nano-scale wet etching
Gota Murai, Masashi Okutani, Syuji Tagawa, Masahiro Yoshimoto (Kyoto Inst. Tech.), Woo Sik Yoo (WaferMasters) SDM2012-127		 The photoluminescence (PL) intensity at room temperature increased with decreasing defect density measured by DLTS(deep ... [more] SDM2012-127
pp.71-76
LQE 2011-12-16
13:10		 Tokyo Kikai-Shinko-Kaikan Bldg. [Encouragement Talk] Lasing in GaAs1-xBix/GaAs thin film cavity by photo-pumping and its low-temperature-dependent oscillation wavelength
Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto (Kyoto Inst. of Tech.) LQE2011-127		 Lasing oscillation from a GaAs1-xBix/GaAs thin film with a Fabry-Perot cavity is achieved by photo-pumping. The GaAs0.97... [more] LQE2011-127
pp.21-24
LQE 2010-12-17
15:25		 Tokyo Kikai-Shinko-Kaikan Bldg. Lasing in GaAs1-xBix/GaAs thin film cavity by photo-pumping and its low-temperature-dependent oscillation wavelength
Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto (Kyoto Inst. Tech.) LQE2010-124		 Lasing oscillation from a GaAs1-xBix/GaAs thin film with a Fabry-Perot cavity is achieved by photo-pumping. The GaAs0.97... [more] LQE2010-124
pp.47-50
SDM 2010-12-17
15:45		 Kyoto Kyoto Univ. (Katsura) Photoluminescence and deep level transient spectroscopy study on recrystallization of ultra-shallow junction
Masashi Okutani, Shuhei Takashima, Masahiro Yoshimoto (KIT), Woo Sik Yoo (WaferMasters, Inc.) SDM2010-198		 Recrystallization of low-energy implanted ultra-shallow junctions (USJs) are characterized by photoluminescence (PL) and... [more] SDM2010-198
pp.73-78
EMT, LQE, OPE, PN 2008-01-29
09:55		 Osaka   Growth of GaAsBi/GaAs Multi-Quantum Wells by Molecular Beam Epitaxy
Yusuke Kinoshita, Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto (Kyoto Inst.Tec.) PN2007-56 OPE2007-164 LQE2007-142		 GaAs1-xBix/GaAs multi-quantum well (MQW) structures were grown on GaAs substrate by molecular beam epitaxy (MBE) towards... [more] PN2007-56 OPE2007-164 LQE2007-142
pp.107-110
 Results 1 - 6 of 6  /   
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