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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 23  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM, ITE-IST [detail] 2020-08-07
11:25
Online Online Gate-all-around p-type poly-Si junctionless nanowire transistor with steep subthreshold slope
Min-Ju Ahn, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (IIS, Tokyo Univ.) SDM2020-9 ICD2020-9
In this work, GAA p-type junctionless nanowire transistor with BF2+ implanted poly-Si channel have been fabricated and e... [more] SDM2020-9 ICD2020-9
pp.41-46
VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2019-11-15
14:15
Ehime Ehime Prefecture Gender Equality Center Triple-Layered Ring Oscillators and Image Sensors Developed by Direct Bonding of SOI Wafers
Masahide Goto (NHK), Yuki Honda (NHK-ES), Toshihisa Watabe, Kei Hagiwara, Masakazu Nanba, Yoshinori Iguchi (NHK), Takuya Saraya, Masaharu Kobayashi (Univ. of Tokyo), Eiji Higurashi (AIST), Hiroshi Toshiyoshi, Toshiro Hiramoto (Univ. of Tokyo) ICD2019-38 IE2019-44
We have studied on pixel-parallel three-dimensional (3D) integrated CMOS image sensors. We previously reported double-la... [more] ICD2019-38 IE2019-44
pp.45-49
SDM 2019-11-07
11:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Study on the scalability of ferroelectric HfO2 tunnel junction memory
Masaharu Kobayashi, Fei Mo, Yusaku Tagawa, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo) SDM2019-69
 [more] SDM2019-69
pp.5-8
SDM, ICD, ITE-IST [detail] 2019-08-08
10:00
Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and Application of Extreme Value Theory to Statistical Analyses of Worst Case SRAM Data Retention Voltage
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2019-41 ICD2019-6
The extreme value theory was applied to the estimation of the maximum SRAM data retention voltage (DRV). It was found th... [more] SDM2019-41 ICD2019-6
pp.27-30
SDM, ICD, ITE-IST [detail] 2019-08-09
09:30
Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and [Invited Talk] A study on a ferroelectric transistor memory with ultrathin IGZO channel
Masaharu Kobayashi, Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo) SDM2019-45 ICD2019-10
(To be available after the conference date) [more] SDM2019-45 ICD2019-10
pp.59-62
SDM 2019-01-29
11:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] The Relationship between Polarization Switching and Subthreshold Behavior in HfO2-based Ferroelectric and Anti-ferroelectric FET: An Experimental Study
Chengji Jin, Kyungmin Jang, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo) SDM2018-84
We have experimentally studied and revealed the direct relationship between polarization switching and subthreshold char... [more] SDM2018-84
pp.13-16
SDM 2019-01-29
11:25
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Simulation study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method with Self-consistent Potential
Fei Mo, Yusaku Tagawa, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo) SDM2018-85
 [more] SDM2018-85
pp.17-20
VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2018-12-07
15:15
Hiroshima Satellite Campus Hiroshima Quarter Video Graphics Array Image Sensor with Linear and Wide-Dynamic-Range Output Developed by Pixel-Wise 3D Integration
Masahide Goto, Yuki Honda, Toshihisa Watabe, Kei Hagiwara, Masakazu Nanba, Yoshinori Iguchi (NHK), Takuya Saraya, Masaharu Kobayashi, Eiji Higurashi, Hiroshi Toshiyoshi, Toshiro Hiramoto (Univ. of Tokyo) CPM2018-97 ICD2018-58 IE2018-76
We report on pixel-parallel three-dimensional (3D) integrated CMOS image sensors. Photodiodes (PDs), pulse generation ci... [more] CPM2018-97 ICD2018-58 IE2018-76
pp.43-48
QIT
(2nd)
2018-11-26
13:30
Tokyo The University of Tokyo [Poster Presentation] Proposal of scalable silicon qubits with stacked structure for realizing multiple qubits
Yuki Ito, Masaharu Kobayashi, Toshiro Hiramoto (IIS)
We have proposed multiple silicon qubits with stacked structure. The qubits and single electron transistors (SETs) for r... [more]
SDM, ICD, ITE-IST [detail] 2018-08-08
09:45
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 Understanding Temperature Effect on Subthreshold Slope Variability in Bulk and SOTB MOSFETs
Shuang Gao, Tomoko Mizutani, Kiyoshi Takeuchi, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo) SDM2018-37 ICD2018-24
We present a new finding that subthreshold slope (SS) variability is reduced at high temperature in both bulk and silico... [more] SDM2018-37 ICD2018-24
pp.65-70
SDM, ICD, ITE-IST [detail] 2018-08-09
13:45
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 Effect of multiple stress application in post-fabrication cell stability self-improvement in SRAM cell array
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2018-49 ICD2018-36
A new version applying multiple stress of the post fabrication SRAM self-improvement technique, which improves SRAM cell... [more] SDM2018-49 ICD2018-36
pp.121-126
SDM, ICD, ITE-IST [detail] 2018-08-09
14:10
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 Device and Process Design for HfO2-Based Ferroelectric Tunnel Junction Memory with Large Tunneling Electroresistance Effect and Multi-level Cell
Masaharu Kobayashi, Yusaku Tagawa, Mo Fei, Toshiro Hiramoto (Univ. Tokyo) SDM2018-50 ICD2018-37
 [more] SDM2018-50 ICD2018-37
pp.127-130
SDM, ICD, ITE-IST [detail] 2017-08-01
09:00
Hokkaido Hokkaido-Univ. Multimedia Education Bldg. [Invited Talk] A Nonvolatile SRAM Integrated with Ferroelectric HfO2 Capacitor for Normally-Off Operation
Masaharu Kobayashi, Nozomu Ueyama, Toshiro Hiramoto (Univ. of Tokyo) SDM2017-37 ICD2017-25
 [more] SDM2017-37 ICD2017-25
pp.45-48
SDM, ICD, ITE-IST [detail] 2017-08-01
09:45
Hokkaido Hokkaido-Univ. Multimedia Education Bldg. Parallel Programming of Non-volatile Power-up States of SRAM
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya (Univ. of Tokyo), Hirofumi Shinohara (Waseda Univ.), Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2017-38 ICD2017-26
A technique for using an ordinary SRAM array for programmable and readable non-volatile (NV) memory is proposed. Paralle... [more] SDM2017-38 ICD2017-26
pp.49-54
SDM 2017-01-30
11:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Experimental Study on Polarization-Limited Operation Speed of Negative Capacitance FET with Ferroelectric HfO2
Masaharu Kobayashi, , , (Univ. of Tokyo) SDM2016-132
 [more] SDM2016-132
pp.9-12
ICD, CPM, ED, EID, EMD, MRIS, OME, SCE, SDM, QIT
(Joint) [detail]
2017-01-31
10:55
Hiroshima Miyajima-Morino-Yado(Hiroshima) [Invited Talk] Experimental Study on Operation Speed of Negative Capacitance FET with Ferroelectric HfO2
Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, Toshiro Hiramoto (IIS, Univ. of Tokyo) EMD2016-79 MR2016-51 SCE2016-57 EID2016-58 ED2016-122 CPM2016-123 SDM2016-122 ICD2016-110 OME2016-91
 [more] EMD2016-79 MR2016-51 SCE2016-57 EID2016-58 ED2016-122 CPM2016-123 SDM2016-122 ICD2016-110 OME2016-91
pp.51-54
VLD, DC, CPSY, RECONF, CPM, ICD, IE
(Joint) [detail]
2016-11-29
10:30
Osaka Ritsumeikan University, Osaka Ibaraki Campus [Invited Talk] Development of Three-Dimensional Integrated CMOS Image Sensors with Pixel-Parallel Signal Processors by Using Direct Bonding of SOI Layers
Masahide Goto, Yuki Honda, Toshihisa Watabe, Kei Hagiwara, Masakazu Nanba, Yoshinori Iguchi (NHK), Takuya Saraya, Masaharu Kobayashi, Eiji Higurasgi, Hiroshi Toshiyoshi, Toshiro Hiramoto (Univ. Tokyo) CPM2016-79 ICD2016-40 IE2016-74
 [more] CPM2016-79 ICD2016-40 IE2016-74
pp.17-21
ICD, SDM, ITE-IST [detail] 2016-08-03
15:05
Osaka Central Electric Club Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm
Tomoko Mizutani, Kiyoshi Takeuchi, Ryota Suzuki, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2016-67 ICD2016-35
The effects of drain voltage in threshold voltage variability in extremely narrow silicon nanowire (NW) channel FETs are... [more] SDM2016-67 ICD2016-35
pp.123-126
ICD, SDM, ITE-IST [detail] 2016-08-03
15:30
Osaka Central Electric Club Performance Enhancement of Tunnel FET by Negative Capacitance
Masaharu Kobayashi, Kyungmin Jang, Nozomu Ueyama, Toshiro Hiramoto (Univ. of Tokyo) SDM2016-68 ICD2016-36
IoT devices in a sensor network require a new energy-efficient transistor which operates at ultralow voltage and power e... [more] SDM2016-68 ICD2016-36
pp.127-130
SDM, ICD 2015-08-24
11:45
Kumamoto Kumamoto City [Invited Talk] Device Design Guideline for negative capacitance FET (NCFET)
Masaharu Kobayashi, Toshiro Hiramoto (The Univ. of Tokyo) SDM2015-60 ICD2015-29
 [more] SDM2015-60 ICD2015-29
pp.15-18
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