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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
MRIS, ITE-MMS 2013-07-12
15:45		 Tokyo Chuo Univ. 3-Dimensional Phase Change Memory Enabling High Density and High Speed Storage
Takashi Kobayashi, Masaharu Kinoshita, Yoshitaka Sasago (Hitachi) MR2013-11		 A three-dimensional vertical chain-cell-type phase change memory (VCCPCM) for next-generation large-capacity storage was... [more] MR2013-11
pp.31-34
ICD 2013-04-11
09:00		 Ibaraki Advanced Industrial Science and Technology (AIST) [Invited Talk] A Low Power Phase Change Memory Using Low Thermal Conductive Material with Nano-Crystalline Structure
Takahiro Morikawa, Ken'ichi Akita, Takasumi Ohyanagi, Masahito Kitamura, Masaharu Kinoshita, Mitsuharu Tai, Norikatsu Takaura (LEAP) ICD2013-1		  [more] ICD2013-1
pp.1-4
ICD, SDM 2012-08-02
15:55		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido Scalable 3-D vertical chain-cell-type phase-change memory with 4F2 poly-Si diodes
Masaharu Kinoshita, Yoshitaka Sasago, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Yoshihisa Fujisaki, Shuichi Kusaba, Tadao Morimoto, Takashi Takahama, Toshiyuki Mine, Akio Shima, Yoshiki Yonamoto, Takashi Kobayashi (Hitachi) SDM2012-74 ICD2012-42		 A three-dimensional (3-D) vertical chain-cell-type phase-change memory (VCCPCM) for next-generation large-capacity stora... [more] SDM2012-74 ICD2012-42
pp.59-63
SDM 2011-11-10
13:00		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking
Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-117		 A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] SDM2011-117
pp.11-15
SDM, ICD 2011-08-26
09:50		 Toyama Toyama kenminkaikan Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming throughput
Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-85 ICD2011-53		 A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] SDM2011-85 ICD2011-53
pp.75-78
ITE-MMS, MRIS 2009-10-09
10:25		 Fukuoka FUKUOKA traffic center [Invited Talk] Low cost technology of phase change memory with low-contact-resistivity poly-Si selection diode
Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) MR2009-26		 We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] MR2009-26
pp.31-35
ICD, SDM 2009-07-17
12:00		 Tokyo Tokyo Institute of Technology Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode
Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hitoshi Kume, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) SDM2009-112 ICD2009-28		 We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] SDM2009-112 ICD2009-28
pp.79-83
SDM 2007-03-15
13:05		 Tokyo Kikai-Shinko-Kaikan Bldg. Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories
Yuichi Matsui, Kenzo Kurotsuchi, Osamu Tonomura, Takahiro Morikawa, Masaharu Kinoshita, Yoshihisa Fujisaki, Nozomu Matsuzaki, Satoru Hanzawa, Motoyasu Terao, Norikatsu Takaura, Hiroshi Moriya, Tomio Iwasaki (Hitachi), Masahiro Moniwa, Tsuyoshi Koga (Renesas) 		A novel memory cell for phase-change memories (PCMs) that enables low-power operation has been developed. Power (i.e., c... [more] SDM2006-254
pp.1-6
SIP, CAS, CS 2007-03-05
09:25		 Tottori Blancart Misasa (Tottori) A Study on Variable Guard Interval Using Estimation of Channel Impulse Response for OFDM Systems
Masaharu Kinoshita, Naoto Sasaoka, Hideaki Tanaka, Yoshio Itoh (Tottori Univ.) CAS2006-78 SIP2006-179 CS2006-95		 In an orthogonal frequency division multiplexing (OFDM) system, a guard interval (GI) is usually used to remove the inte... [more] CAS2006-78 SIP2006-179 CS2006-95
pp.7-12
RCS, SIP
(Joint)		 2006-01-27
11:20		 Fukuoka Kyusyu Univ. A STUDY ON LPF ESTIMATION BASED ON ADAPTIVE FILTER FOR OFDM SYSTEM
Shiho Danno, Naoto Sasaoka, Masaharu Kinoshita, Yoshio Itoh (Tottori Univ.), Baiko Sai (Rohm Co.) 		 [more] SIP2005-138
pp.13-18
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