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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 11件中 1~11件目  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2019-11-22
12:45
Shizuoka Shizuoka Univ. (Hamamatsu) Progress of UVC-LEDs using DC sputter AlN templates
Yosuke Mogami (RIKEN/Saitama Univ.), Atsushi Osawa, Kazuto Ozaki, Yukitake Tanioka, Atsushi Maeoka (SCREEN), Yuri Itokazu, Syunsuke Kuwaba (RIKEN/Saitama Univ.), Masafumi Jo, Noritoshi Maeda (RIKEN), Hiroyuki Yaguchi (Saitama Univ.), Hideki Hirayama (RIKEN) ED2019-53 CPM2019-72 LQE2019-96
A high-quality AlN substrate or template is required to realize AlGaN-based UVC-LEDs which has a wide range of applicati... [more] ED2019-53 CPM2019-72 LQE2019-96
pp.85-88
ED, LQE, CPM 2018-11-29
13:50
Aichi Nagoya Inst. tech. Recent progress toward realization of AlGaN deep UV LD
Noritohsi Maeda (RIKEN), Yoichi Yamada (Yamaguchi Univ.), Masafumi Jo, Hideki Hirayama (RIKEN) ED2018-34 CPM2018-68 LQE2018-88
 [more] ED2018-34 CPM2018-68 LQE2018-88
pp.9-12
LQE 2017-12-15
14:10
Tokyo   [Invited Talk] Recent progress of AlGaN deep-UV LEDs
Hideki Hirayama, Masafumi Jo, Noritoshi Maeda (RIKEN), Yukio Kashima (Marubun) LQE2017-91
AlGaN deep ultraviolet light-emitting diodes (DUV-LEDs) are attracting a great deal of attention, since they have the po... [more] LQE2017-91
pp.21-26
LQE, CPM, ED 2017-12-01
10:55
Aichi Nagoya Inst. tech. Achievement of AlGaN deep-UV LED using photonic crystal(PhC) -- Achievement of high-EQE(10%) AlGaN deep-UV LED using highly-reflective PhC on p-contact layer --
Yukio Kashima (Marubun), Noritoshi Maeda (RIKEN), Eriko Matsuura (Marubun), Masafumi Jo (RIKEN), Takeshi Iwai, Toshiro Morita (TOK), Mitsunori Kokubo, Takaharu Tashiro (TOSHIBA MACHINE), Ryuichiro Kamimura, Yamato Osada (ULVAC), Yuichi Kurashima, Hideki Takagi (AIST), Hideki Hirayama (RIKEN) ED2017-60 CPM2017-103 LQE2017-73
 [more] ED2017-60 CPM2017-103 LQE2017-73
pp.55-60
LQE, CPM, ED 2017-12-01
15:35
Aichi Nagoya Inst. tech. Thermal annealing of semipolar AlN on m-plane sapphire
Masafumi Jo, Satoshi Minami, Hideki Hirayama (RIKEN) ED2017-68 CPM2017-111 LQE2017-81
 [more] ED2017-68 CPM2017-111 LQE2017-81
pp.91-94
CPM, LQE, ED 2016-12-13
09:30
Kyoto Kyoto University Growth and optical properties of semipolar AlGaN/AlN quantum wells on m-plane sapphire substrates
Issei Oshima (RIKEN/Saitama Univ.), Masafumi Jo, Noritoshi Maeda (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN) ED2016-69 CPM2016-102 LQE2016-85
 [more] ED2016-69 CPM2016-102 LQE2016-85
pp.61-66
ED, LQE, CPM 2015-11-27
13:30
Osaka Osaka City University Media Center High-temperature growth of a-AlGaN/AlN and its optical properties
Masafumi Jo, Hideki Hirayama (RIKEN) ED2015-85 CPM2015-120 LQE2015-117
 [more] ED2015-85 CPM2015-120 LQE2015-117
pp.85-88
ED, LQE, CPM 2015-11-27
13:55
Osaka Osaka City University Media Center Growth and optical properties of semi-polar AlGaN/AlN layers grown on m-plane sapphire substrates
Issei Oshima (Saitama Univ./RIKEN), Masafumi Jo, Noritoshi Maeda (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN) ED2015-86 CPM2015-121 LQE2015-118
 [more] ED2015-86 CPM2015-121 LQE2015-118
pp.89-93
LQE, ED, CPM 2014-11-28
11:25
Osaka   Operation of deep UV LED using superlattice p-AlGaN hole-spreading contact layer
Noritoshi Maeda, Masafumi Jo, Hideki Hirayama (RIKEN) ED2014-88 CPM2014-145 LQE2014-116
P-GaN free structure and highly-reflective p-type electrode are required for realizing high light-extraction efficiency ... [more] ED2014-88 CPM2014-145 LQE2014-116
pp.73-76
LQE, ED, CPM 2014-11-28
11:50
Osaka   Deep UV light-emitting diodes containing a p-AlGaN contacting layer with high Al content
Masafumi Jo, Noritoshi Maeda, Hideki Hirayama (RIKEN) ED2014-89 CPM2014-146 LQE2014-117
AlGaN light-emitting diodes (LEDs) have been extensively studied for highly efficient light sources in deep ultraviolet ... [more] ED2014-89 CPM2014-146 LQE2014-117
pp.77-80
EMD, CPM, LQE, OPE 2006-08-25
09:40
Hokkaido Chitose Arcadia Plaza Examination of single photon emission from Te isoelectronic centers in ZnSe
Masafumi Jo, Michiaki Endo, Hidekazu Kumano, Ikuo Suemune (Hokkaido Univ.)
 [more] EMD2006-36 CPM2006-66 OPE2006-78 LQE2006-43
pp.61-65
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