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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2023-11-30
15:20		 Shizuoka   Formation of p-type GaN by Mg thermal diffusion and challenges for device applications
Yuta Itoh, Hirotaka Watanabe, Manato Deki, Shugo Nitta, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2023-19 CPM2023-61 LQE2023-59		 Establishment of a localized p-type doping technique is essential to realize vertical GaN power devices. However, in Mg ... [more] ED2023-19 CPM2023-61 LQE2023-59
pp.25-30
SDM 2019-06-21
16:25		 Aichi Nagoya Univ. VBL3F Evaluation of Interface Characteristics in GaN-MOS Capacitors with Boron-doped Al2O3 Gate Insulators
Manato Deki, Shin Okude, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) SDM2019-34		  [more] SDM2019-34
pp.43-46
SDM 2018-06-25
11:00		 Aichi Nagoya Univ. VBL3F Evaluation of Interface State Density in GaN-MOS Capacitors on Miscut m-plane GaN Substrates
Manato Deki, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) SDM2018-16		  [more] SDM2018-16
pp.1-4
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