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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 22  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
OME, SDM 2022-04-22
14:10
Miyazaki Takachiho Hall
(Primary: On-site, Secondary: Online)
Mechanism for improving electrical properties of InGaZnOx thin-film transistors through annealing
Rostislav Velichko (KUT), Yusaku Magari (Shimane Univ.), Mamoru Furuta (KUT) SDM2022-4 OME2022-4
(To be available after the conference date) [more] SDM2022-4 OME2022-4
pp.17-20
OME, SDM 2022-04-23
11:50
Miyazaki Takachiho Hall
(Primary: On-site, Secondary: Online)
[Invited Talk] High-mobility (>100 cm2V-1s-1) In2O3:H Thin-film Transistors by Solid-phase Crystallization
Yusaku Magari (Shimane Univ.), Taiki Kataoka (Kochi Univ. of Tech.), Wenchang Yeh (Shimane Univ.), Mamoru Furuta (Kochi Univ. of Tech.) SDM2022-13 OME2022-13
(To be available after the conference date) [more] SDM2022-13 OME2022-13
pp.61-64
SDM, OME 2021-04-23
15:50
Okinawa Okinawaken Seinen Kaikan
(Primary: On-site, Secondary: Online)
[Invited Talk] Challenge for oxide TFTs toward LTPS TFTs
Mamoru Furuta (Kochi Univ. of Technol.) SDM2021-5 OME2021-5
 [more] SDM2021-5 OME2021-5
pp.19-21
EID, SDM, ITE-IDY [detail] 2020-12-02
14:30
Online Online [Special Invited Talk] Defects control in oxide semiconductors at low-temperature and its application to flexible devices
Yusaku Magari, Mamoru Furuta (Kochi Univ. of Technol.) EID2020-10 SDM2020-44
High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum p... [more] EID2020-10 SDM2020-44
pp.37-41
SDM, OME 2020-04-14
10:40
Okinawa Okinawaken Seinen Kaikan
(Cancelled, technical report was not issued)
[Invited Talk] Oxide vs. poly-Si TFTs
Mamoru Furuta (KUT)
 [more]
OME, SDM 2019-04-26
15:20
Kagoshima Yakushima Environmental and Culture Village Center Heterojunction channel IGZO Thin-Film Transistor
Mamoru Furuta, Daichi Koretomo, Ryunosuke Higashi, Shuhei Hamada (KUT.) SDM2019-6 OME2019-6
 [more] SDM2019-6 OME2019-6
pp.23-26
EID, SDM, ITE-IDY [detail] 2018-12-25
11:45
Kyoto   Device Using Thin Film of GTO by MistCVD Method
Yuta Takishita (Ryukoku Univ.), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
 [more]
EID, SDM, ITE-IDY [detail] 2018-12-25
14:30
Kyoto   Dependence of thermoelectric properties and structure of Ga-Sn-O thin films on annealing
Yoku Ikeguchi, Tatsuya Aramaki (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Mutsumi Kimura (Ryukoku Univ.)
 [more]
SDM, OME 2018-04-07
13:10
Okinawa Okinawaken Seinen Kaikan [Invited Talk] properties of IGZO thin-film transistors.
Mamoru Furuta, Aman S G Mehadi, Daichi Koretomo, Yusaku Magari (Kochi Univ. of Tech.) SDM2018-6 OME2018-6
(To be available after the conference date) [more] SDM2018-6 OME2018-6
pp.25-28
SDM, OME 2018-04-07
13:50
Okinawa Okinawaken Seinen Kaikan Thin-film transistor with InGaZnOx-hetero-channel
Ryunosuke Higashi, Daichi Koretomo, Hirosato Tanaka (Kochi Univ. of Tech.), Seiichiro Takahashi, Isamu Yashima (Mitsui Mining & Smelting Co.,LTD), Mamoru Furuta (Kochi Univ. of Tech.) SDM2018-7 OME2018-7
(To be available after the conference date) [more] SDM2018-7 OME2018-7
pp.29-31
SDM, OME 2018-04-07
14:15
Okinawa Okinawaken Seinen Kaikan Origin of Schottky properties in InGaZnOX/AgOX hetero-interface and its application to flexible device.
Yusaku Magari, Hisao Makino, Shinsuke Hashimoto, Kenichiro Hamada, Kentaro Masuda, Mamoru Furuta (Kochi Univ. of Tech.) SDM2018-8 OME2018-8
Oxide heterojunction of the In–Ga–Zn–O (IGZO) and the silver oxide (AgOX) has been reported to exhibit better Schottky c... [more] SDM2018-8 OME2018-8
pp.33-36
SDM, OME 2016-04-09
10:10
Okinawa Okinawa Prefectural Museum & Art Museum [Invited Talk] Low-temperature processed self-aligned InGaZnO thin-film transistors for flexible device applications
Mamoru Furuta, Tatsuya Toda, Gengo Tatsuoka, Yusaku Magari (Kochi Univ. of Technol.) SDM2016-13 OME2016-13
 [more] SDM2016-13 OME2016-13
pp.53-56
SDM, OME 2016-04-09
10:50
Okinawa Okinawa Prefectural Museum & Art Museum Device simulation analysis of carrier transport in In-Ga-Zn-O thin-film transistors -- Influence of carrier concentration in back-channel region --
Daichi Koretomo, Tatsuya Toda (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Mamoru Furuta (KUT) SDM2016-14 OME2016-14
The influence of high carrier concentration region in In-Ga-Zn-O (IGZO ) on the electrical properties of a bottom-gate I... [more] SDM2016-14 OME2016-14
pp.57-60
EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] 2016-01-28
15:04
Toyama Toyama Univ. Plasma treatment for source/drain regions of self-aligned InGaZnO thin-film transistors -- Effects of substrate bias during the plasma treatment of IGZO. --
Yusaku Magari, Tatsuya Toda, Hisao Makino, Mamoru Furuta (Kochi Univ. of Technol.) EID2015-31
 [more] EID2015-31
pp.41-44
OME, SDM 2015-04-29
17:05
Okinawa Oh-hama Nobumoto Memorial Hall Effect of fluorine in In-Ga-Zn-O on defect passivartion and reliability of thin-film transistors
Mamoru Furuta, Jingxin Jiang, Gengo Tatsuoka, Dapeng Wang (Kochi Univ. of Tech.) SDM2015-8 OME2015-8
Effets of fluorine in In-Ga-Zn-O on defect passivation and reliability improvement of thin-film transistor have been inv... [more] SDM2015-8 OME2015-8
pp.31-34
SDM, EID 2014-12-12
15:15
Kyoto Kyoto University Characterization of the touch panel circuit using ITZO TFTs
Yuki Koga, Tokiyoshi Matsuda (Ryukoku Univ.), Mamoru Furuta (Kochi Univ. of Technol.), Mutsumi Kimura (Ryukoku Univ.) EID2014-30 SDM2014-125
Oxide TFTs using ITZO for the active layer (ITZO TFTs) have attracted attention as a driving element of flatpanel displ... [more] EID2014-30 SDM2014-125
pp.89-93
SDM 2013-12-13
09:00
Nara NAIST Analysis of thermal-induced degradation in oxide thin-film transistor under pulse voltage stress
Kahori Kise (NAIST), Shigekazu Tomai (Idemitsu Kosan), Yoshihiro Ueoka, Haruka Yamazaki, Satoshi Urakawa (NAIST), Koki Yano (Idemitsu Kosan), Dapeng Wang, Mamoru Furuta (Kochi Univ. of Tech.), Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2013-116
In recent years, transparent amorphous oxide semiconductor (TAOS), represented by a-InGaZnO have been reported. Because ... [more] SDM2013-116
pp.1-5
ITE-IDY, EID, IEE-EDD 2013-01-25
10:10
Shizuoka Shizuoka Univ. Fabrication and properties of Oxide TFT stacked with IGZO/AlOx prepared by non-vacuum process "mist CVD"
Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Mamoru Furuta (KUT)
 [more]
SDM 2011-12-16
13:30
Nara NAIST [Invited Talk] Influence of subgap density of states on electrical properties and reliability of ZnO TFT.
Mamoru Furuta, Shin-ichi Shimakawa (Kochi Univ. of Tech.) SDM2011-139
 [more] SDM2011-139
pp.37-41
R 2011-05-13
15:00
Kochi Kochi City Culture-Plaza Cul-Port Bias-Temperature Instability in Zin Oxide Thin-Film Transistors
Mamoru Furuta, Takahiro Hiramatsu, Tokiyoshi Matsuda, Takashi Hirao (Kochi Univ. of Tech.), Yudai Kamada, Shizuo Fujita (Kyoto Univ.) R2011-11
 [more] R2011-11
pp.19-22
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