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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, OME 2021-04-23
16:20		 Okinawa Okinawaken Seinen Kaikan
(Primary: On-site, Secondary: Online)		 [Invited Talk] Hot Carrier Effect in Oxide Thin Film Transistors
Yukiharu Uraoka, Takanori Takahashi, Mami Fujii, Juan Paolo Bermundo, Mutsunori Uenuma (NAIST) SDM2021-6 OME2021-6		  [more] SDM2021-6 OME2021-6
pp.22-25
CPM, OPE, LQE, R, EMD 2015-08-27
10:35		 Aomori Aomori-Bussankan-Asupamu Elecrically Stable IGZO Thin Film Transistors using Ionic-Liquid Gate Dielectric
Hiromi Okada, Mami Fujii, Yasuaki Ishikawa (NAIST), Kazumoto Miwa (CRIEPI), Yukiharu Uraoka (NAIST), Shimpei Ono (CRIEPI) R2015-23 EMD2015-31 CPM2015-47 OPE2015-62 LQE2015-31		 Amorphous-InGaZnO(a-IGZO) thin-film transistors (TFTs) have good characteristics such as low leakage current, high field... [more] R2015-23 EMD2015-31 CPM2015-47 OPE2015-62 LQE2015-31
pp.5-8
CPM, OPE, LQE, R, EMD 2015-08-27
11:00		 Aomori Aomori-Bussankan-Asupamu Highly reliable a-InGaZnO thin-film transistors with fluorine in a gate insulator
Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Juan Paolo Bermundo (NAIST), Eiji Takahashi, Yasunori Andoh (Nissin Electric), Yukiharu Uraoka (NAIST) R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32		 Considerable attention has been paid to amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) as per... [more] R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32
pp.9-11
SDM 2015-06-19
15:50		 Aichi VBL, Nagoya Univ. Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process
Keisuke Kado, Mutsunori Uenuma, Kyouhei Nabesaka, Kriti Sharma, Haruka Yamazaki, Satoshi Urakawa, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2015-52		 a-InGaZnO based non-volatile memories were fabricated as resistive random access memory (ReRAM) for use in System on Pan... [more] SDM2015-52
pp.75-80
SDM 2010-12-17
17:25		 Kyoto Kyoto Univ. (Katsura) Effect of high pressure vapor anneal treatment on the a-In2Ga2Zn1O7 TFTs characteristics
Tomoki Maruyama, Mami Fujii (NAIST), Masashi Kasami, Koki Yano (Idemitsu Kosan), Masahiro Horita, Yasuaki Ishikawa (NAIST), Yukiharu Uraoka (NAIST/JST-CREST) SDM2010-203		 Amorphous oxide semiconductor(a-IGZO) is useful materials to realize transparent flexible Thin Film Transistor (TFT). Po... [more] SDM2010-203
pp.99-102
SDM, OME 2008-04-11
14:05		 Okinawa Okinawa Seinen Kaikan Degradation of Ga2o3-In2O3-Zno(GIZO) Thin Film Transistors
Mami Fujii, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ji Sim Jung, Jang Yeon Kwon (Sumsung Advenced Institute of Technology) SDM2008-10 OME2008-10		 We have investigated a degradation of Ga2O3-In2O3-ZnO（GIZO）thin film transistor under DC stress. For a positive gate bia... [more] SDM2008-10 OME2008-10
pp.47-50
 Results 1 - 6 of 6  /   
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