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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW, ED |
2015-01-16 10:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
An X-band 310 W High Power GaN HEMT Amplifier Ken Kikuchi, Makoto Nishihara, Hiroshi Yamamoto, Shinya Mizuno, Fumikazu Yamaki, Takashi Yamamoto (SEDI) ED2014-126 MW2014-190 |
A high-output power and broadband GaN high electron mobility transistor (HEMT) has been developed for X-band application... [more] |
ED2014-126 MW2014-190 pp.53-58 |
ED, MW |
2012-01-12 16:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
High Power X-band 200W AlGaN/GaN HEMT Makoto Nishihara, Takashi Yamamoto (SEDI), Shinya Mizuno, Seigo Sano (SEI), Yuichi Hasegawa (SEDI) ED2011-141 MW2011-164 |
A 200 Watts GaN high electron mobility transistor (HEMT) has been developed for X-band applications. The device consists... [more] |
ED2011-141 MW2011-164 pp.121-123 |
ED, MW |
2008-01-16 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
An 87W AlGaN/GaN HEMT for X-band Pulse Operation Makoto Nishihara, Takashi Tamamoto, Kazutaka Inoue, Masahiro Nishi, Seigo Sano (Eudyna) ED2007-211 MW2007-142 |
In this paper, we report our result of a 60W AlGaN/GaN HEMT with the operating frequency in X-band. The device technolog... [more] |
ED2007-211 MW2007-142 pp.29-31 |
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