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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| EE | 2019-01-16 11:00 |
Kumamoto | KCIC | Fault detection of photovoltaic strings using parameter estimation of string circuit model Shigeomi Hara, Makoto Kasu (Saga Univ.)  EE2018-39 |
We aim at detecting faults and recognizing those sorts for photovoltaic strings in mega solar power plants. We use measu... [more] | EE2018-39 pp.7-11 |
| LQE, CPM, ED | 2017-12-01 13:20 |
Aichi | Nagoya Inst. tech. | Study on degradation of NO2 adsorbed H-terminated diamond MOS FETs by constant voltage stress Yuma Ishimatsu, Kosuke Funaki, Satoshi Masuya, Kyosuke Miyazaki, Takayoshi Oshima, Makoto Kasu, Toshiyuki Oishi (Saga Univ.) ED2017-63 CPM2017-106 LQE2017-76 |
Diamond is expected to be applied to high frequency and high power devices, so far high frequency and high power operati... [more] | ED2017-63 CPM2017-106 LQE2017-76 pp.69-72 |
| CPM, ED, SDM | 2016-05-19 15:25 |
Shizuoka | Shizuoka University, Hamamatsu campus (Joint Research Lab.) | Rectenna circuits with diamond Schottky barrier diodes Naoto Kawano, Makoto Kasu, Toshiyuki Oishi (Saga Univ.) ED2016-18 CPM2016-6 SDM2016-23 |
[more] | ED2016-18 CPM2016-6 SDM2016-23 pp.25-28 |
| ED | 2016-01-20 13:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Estimation of RF-DC conversion efficiency of microwave power Shottky barrier diodes for rectenna by small equivalent circuit model
-- Comparison of semiconductor materials -- Toshiyuki Oishi, Makoto Kasu (Saga Univ.) ED2015-116 |
RF-DC conversion efficiencies of rectenna using conventional and wide bandgap semiconductors are estimated by small sign... [more] | ED2015-116 pp.25-29 |
| ED, CPM, SDM | 2015-05-28 16:05 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Schottky barrier diodes of high mobility β-Ga2O3 (-201) single crystals grown by edge-defined-fed growth method Yuta Koga, Kazuya Harada, Kenji Hanada, Toshiyuki Oishi, Makoto Kasu (Saga Univ.) ED2015-22 CPM2015-7 SDM2015-24 |
High Hall electron mobility and its high performances of Schottky barrier diodes on edge-defined film-fed grown (2 ̅... [more] | ED2015-22 CPM2015-7 SDM2015-24 pp.31-34 |
| ED, CPM, SDM | 2015-05-28 17:05 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Device simulation of NO2-exposed H-terminated diamond FETs with Al2O3 insulator Toshiyuki Oishi, Ryutaro Higashi, Kazuya Harada, Yuta Koga (Saga Univ.), Kazuyuki Hirama (NTT), Makoto Kasu (Saga Univ.) ED2015-24 CPM2015-9 SDM2015-26 |
This paper investigated the simulation model for NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate, which ... [more] | ED2015-24 CPM2015-9 SDM2015-26 pp.41-44 |
| EE | 2008-11-20 15:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Development of Power Conditioner for Photovoltaic System with Gradationally Controlled Voltage Inverter Tomoyuki Kawakami, Tatsuya Okuda, Kenji Fujiwara, Akihiko Iwata, Naoki Nishio, Makoto Kasugai (Mitsubishi Elec Co.) EE2008-52 |
A typical photovoltaic system consists of a module containing multiple photovoltaic cells and a power conditioner that c... [more] | EE2008-52 pp.47-50 |
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