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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2024-06-21 14:00 |
Osaka |
Kwansei Gakuin Univ., Umeda Campus |
[Invited Lecture]
Demonstration of AlN-Based Vertical p-n Diodes with Distributed Polarization Doping Takeru Kumabe (Nagoya Univ.), Akira Yoshikawa (Asahi Kasei), Seiya Kawasaki, Maki Kushimoto, Yoshio Honda, Manabu Arai, Jun Suda, Hiroshi Amano (Nagoya Univ.) |
[more] |
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SDM |
2019-06-21 16:25 |
Aichi |
Nagoya Univ. VBL3F |
Evaluation of Interface Characteristics in GaN-MOS Capacitors with Boron-doped Al2O3 Gate Insulators Manato Deki, Shin Okude, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) SDM2019-34 |
[more] |
SDM2019-34 pp.43-46 |
SDM |
2018-06-25 11:00 |
Aichi |
Nagoya Univ. VBL3F |
Evaluation of Interface State Density in GaN-MOS Capacitors on Miscut m-plane GaN Substrates Manato Deki, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) SDM2018-16 |
[more] |
SDM2018-16 pp.1-4 |
LQE, CPM, ED |
2017-11-30 15:25 |
Aichi |
Nagoya Inst. tech. |
Study on oxygen reduction in MOVPE growth of GaN on -c-plane GaN substrate Tsukasa Kono, Maki Kushimoto, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2017-53 CPM2017-96 LQE2017-66 |
GaN epitaxial layer grown on -c plane substrate by MOVPE has a smaller amount of carbon incorporation that compensates e... [more] |
ED2017-53 CPM2017-96 LQE2017-66 pp.19-22 |
ED, SDM, CPM |
2012-05-17 14:30 |
Aichi |
VBL, Toyohashi Univ. of Technol. |
Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) ED2012-20 CPM2012-4 SDM2012-22 |
We grew High-quality semipolar (1-101) GaN stripes on a Si substrate through Selective area growth (SAG) and regrow InGa... [more] |
ED2012-20 CPM2012-4 SDM2012-22 pp.15-18 |
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