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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, SDM |
2010-07-02 10:35 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al2O3 as gate dielectric Joseph Freedsman, Arata Watanabe, Lawrence Selvaraj, Takashi Egawa (Nagoya Inst. of Tech.) ED2010-106 SDM2010-107 |
[more] |
ED2010-106 SDM2010-107 pp.245-248 |
SDM, CPM, ED |
2010-05-13 13:55 |
Shizuoka |
Shizuoka University (Hamamatsu Campus) |
Improved p-InGaN/AlGaN/GaN normally-off HEMTs on silicon substrates Kazuhiro Nagai, Lawrence Selvaraj, Takashi Egawa (Nagoya Inst. of Tech.) ED2010-18 CPM2010-8 SDM2010-18 |
[more] |
ED2010-18 CPM2010-8 SDM2010-18 pp.5-9 |
ED, LQE, CPM |
2009-11-20 14:00 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
High breakdown voltage of AlGaN/GaN HEMTs on Si substrates Takaaki Suzue, Lawrence Selvaraj, Takashi Egawa (Nagoya Inst. of Tech.) ED2009-155 CPM2009-129 LQE2009-134 |
We have studied the breakdown characteristics of thick AlGaN/GaN HEMTs on Si substrate with multilayer structure. The br... [more] |
ED2009-155 CPM2009-129 LQE2009-134 pp.129-132 |
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