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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2020-10-22
Online Online Investigation of N-doped LaB6/LaBxNy/Si(100) MIS structure and floating-gate memory applications
Kyung Eun Park, Hideki Kamata, Shun-ichiro Ohmi (Tokyo Tech) SDM2020-16
 [more] SDM2020-16
SDM 2019-10-23
Miyagi Niche, Tohoku Univ. The investigation of interface property of N-doped LaB6/SiO2/Si(100) stack structure by increasing deposition temperature
Kyung Eun Park, Hideki Kamata, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-55
 [more] SDM2019-55
SDM 2018-10-18
Miyagi Niche, Tohoku Univ. Improvement of Pentacene/SiO2 Interface Properties by the N-doped LaB6 Interfacial Layer
Yasutaka Maeda, Kyung Eun Park, Yuki Komatsu, Shun-ichiro Ohmi (Tokyo Tech) SDM2018-60
We have reported that the effect of nitrogen-doped LaB6 interfacial layer on the improvement of pentacene-based device c... [more] SDM2018-60
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