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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
EMD, OPE, LQE, CPM |
2010-08-26 17:40 |
Hokkaido |
Chitose Arcadia Plaza |
Theoretical analysis of Property Improvement of InGaAs/InAlAs Five-layer Asymmetric Coupled Quantum Well for phase modulator by Strain Application Takaki Wajima, Taro Arakawa (Yokohama National Univ.), Kunio Tada (Kanazawa Inst. Technol.) EMD2010-41 CPM2010-57 OPE2010-66 LQE2010-39 |
[more] |
EMD2010-41 CPM2010-57 OPE2010-66 LQE2010-39 pp.71-74 |
OPE, EMD, CPM, LQE |
2009-08-20 09:05 |
Miyagi |
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Property Improvement of InGaAs/InAlAs Five-layer Asymmetric Coupled Quantum Well Motoki Ushigome, Taro Arakawa (Yokohama National Univ.), Kunio Tada (Kanazawa Inst. of Tech.) EMD2009-26 CPM2009-50 OPE2009-74 LQE2009-33 |
Five-layer Asymmetric Coupled Quantum Well (FACQW) is a potential tailored quantum well suited for high-performance opti... [more] |
EMD2009-26 CPM2009-50 OPE2009-74 LQE2009-33 pp.1-6 |
LQE, OPE |
2009-06-19 09:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Theoretical Study on Fabrication Tolerance of Five-Layer Asymmetric Coupled Quantum Well Yuji Iseri, Taro Arakawa (Yokohama National Univ.), Kunio Tada (Kanazawa Inst. of Tech.), Nobuo Haneji (Yokohama National Univ.) OPE2009-16 LQE2009-19 |
For evaluating fabrication tolerance of an InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW), influence o... [more] |
OPE2009-16 LQE2009-19 pp.1-6 |
LQE |
2009-05-22 10:50 |
Toyama |
Kanazawa Univ. |
Electro-Optical Effect of Asymmetric Triply Coupled Quantum Well Kenji Ema, Wataru Endo, Taro Arakawa (Yokohama National Univ.), Kunio Tada (Kanazawa Inst. of Tech.) LQE2009-6 |
An asymmetric triply coupled quantum well (ATCQW) was proposed and its electrorefractive effect was discussed. The ATCQW... [more] |
LQE2009-6 pp.27-32 |
CPM, LQE, OPE, EMD |
2007-08-24 09:25 |
Hokkaido |
Hokaido Univ. |
Fabrication of InGaAs/InAlAs Five-Layer Asymmetric Coupled Qunatum Well and Application to Optical Modulators Takahiro Toya, Kouichiro Yamaguchi, Takahiro Uchimura, Taro Arakawa (Yokohama National Univ.), Joo-Hyong Noh (Yokogawa Electric Corp.), Kunio Tada (Kanazawa Inst. Technol.) EMD2007-43 CPM2007-64 OPE2007-81 LQE2007-44 |
[more] |
EMD2007-43 CPM2007-64 OPE2007-81 LQE2007-44 pp.77-82 |
OPE, LQE |
2006-06-30 14:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
MZI Optical Switch based on InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well Taro Arakawa, Yoshinari Nakada, Hiroaki Miyake, Takahiro Uchimura (Yokohama Nat'l Univ.), Kunio Tada (Kanazawa Inst. Technol.) |
[more] |
OPE2006-21 LQE2006-25 pp.31-34 |
LQE, OPE |
2005-06-24 16:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Giant Electrorefractive Index Change in GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well (FACQW) and Its Application to High-Performance Optical Modulators Taro Arakawa, Hirokazu Itoh, Koji Takada (Yokohama Nat'l Univ.), Kunio Tada (Kanazawa Inst. Tech.), Joo-Hyong Noh (Yokogawa Electric Corp.), Nobuo Haneji (Yokohama Nat'l Univ.) |
[more] |
OPE2005-25 LQE2005-24 pp.55-60 |
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