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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, SDM, ED 2011-05-19
17:30		 Aichi Nagoya Univ. (VBL) High-quality AlN/GaN distributed Bragg reflectors grown on AlN templates
Kouta Yagi, Mitsuru Kaga, Kouji Yamashita, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijou Univ.), Isamu Akasaki (Meijou Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-18 CPM2011-25 SDM2011-31		 AlN/GaN multilayer structures have relatively large refractive index differences in the group-III nitride semiconductors... [more] ED2011-18 CPM2011-25 SDM2011-31
pp.89-93
CPM, SDM, ED 2011-05-20
09:25		 Aichi Nagoya Univ. (VBL) Current path control with Nitride semiconductor-based tunnel junction
Kouji Yamashita, Mitsuru Kaga, Kouta Yagi (Meijo Univ.), Atsushi Suzuki (EL-SEED Corp.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-20 CPM2011-27 SDM2011-33		 Current path control in nitride semiconductor-based devices with tunnel junctions have been investigated along the follo... [more] ED2011-20 CPM2011-27 SDM2011-33
pp.99-104
CPM, SDM, ED 2011-05-20
09:50		 Aichi Nagoya Univ. (VBL) Fabrication of GaN-based Tunnel Junctions
Mitsuru Kaga, Daisuke Iida (Meijo Univ), Tsukasa Kitano (EL-SEED), Kouji Yamashita, Kouta Yagi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki (Meijo Univ/Nagoya Univ), Hiroshi Amano (Nagoya Univ) ED2011-21 CPM2011-28 SDM2011-34		 We have investigated nitride semiconductor-based tunnel junctions for a novel current injection, not restricted with the... [more] ED2011-21 CPM2011-28 SDM2011-34
pp.105-110
 Results 1 - 3 of 3  /   
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