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 Results 1 - 20 of 52  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2018-01-26
Tokyo Kikai-Shinko-Kaikan Bldg. UHF-C Band Broadband Power Amplifier with Series Connected SiGe HBT and GaN HEMT
Eigo Kuwata, Kengo Kawasaki, Daisuke Tsunami, Kazuhiro Maeda, Koji Yamanaka (MELCO) ED2017-98 MW2017-167
This paper reports on a multi chips amplifier consists of Gallium Nitride High Electron Mobility Transistor (GaN HEMT) a... [more] ED2017-98 MW2017-167
MW 2017-11-09
Okinawa Miyakojima Marin Terminal Bldg. A 30-W class X-band GaN-on-Si MMIC Power Amplifier with a GaAs MMIC Output Matching Circuit
Jun Kamioka, Yoshifumi Kawamura, Kazuhiko Nakahara, Hiroyuki Okazaki, Masatake Hangai, Koji Yamanaka (Mitsubishi Electric Corporation) MW2017-122
 [more] MW2017-122
MW, EMCJ, EST, IEE-EMC [detail] 2017-10-20
Akita Yupopo 5.8GHz High Efficiency GaN Amplifier for Practical Use of Microwave Power Transfer
Koji Yamanaka, Kazuhiro Iyomasa, Masatake Hangai, Hiromitsu Utsumi, Jun Nishihara, Yukihiro Homma (Mitsubishi Electric), Kenji Sakaki (J-SS) EMCJ2017-47 MW2017-99 EST2017-62
In this paper, a state-of-the-art high power and high efficiency GaN HEMT amplifier, which is to be used in 5.8GHz micro... [more] EMCJ2017-47 MW2017-99 EST2017-62
MW, EMCJ, EST, IEE-EMC [detail] 2017-10-20
Akita Yupopo Demonstration of Uniform Heating Distribution Control for Microwave Heating Small Reactor with Solid-State Oscillators
Kazuhiro Iyomasa, Yoshifumi Kawamura, Ryota Komaru, Yutaro Yamaguchi, Keigo Nakatani, Takeshi Shiode, Koji Yamanaka, Kazutomi Mori, Hiroshi Fukumoto (Melco) EMCJ2017-58 MW2017-110 EST2017-73
(To be available after the conference date) [more] EMCJ2017-58 MW2017-110 EST2017-73
Saitama Saitama University 20W Output Power C-X Band Broadband High Efficiency High Power Amplifier with MIM Resonator Type Multi Matching Network
Eigo Kuwata, Dai Ninomiya, Daisuke Tsunami, Makoto Kimura, Koji Yamanaka (MELCO) MW2017-76
 [more] MW2017-76
MW, ED 2017-01-27
Tokyo Kikai-Shinko-Kaikan Bldg. An X-band Low Loss/High Power SPST Switch Using GaN on Si
Ryota Komaru, Masatake Hangai, Kazuhiko Nakahara, Hiroyuki Okazaki, Koji Yamanaka (Mitsubishi Electric) ED2016-106 MW2016-182
An X-band low loss and high power switch using GaN on Si has been developed. The high power switch utilized asymmetric c... [more] ED2016-106 MW2016-182
MW, ED 2017-01-27
Tokyo Kikai-Shinko-Kaikan Bldg. Physical model of GaN HEMT on Si including temperature dependence of RF leakage current in substrates
Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga univ.) ED2016-107 MW2016-183
 [more] ED2016-107 MW2016-183
MW, ED 2017-01-27
Tokyo Kikai-Shinko-Kaikan Bldg. Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation
Toshiyuki Oishi (Saga univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric corp.) ED2016-108 MW2016-184
Effects of passivation residual stress on electrical characteristics for GaN HEMTs have been studied by using a TCAD sim... [more] ED2016-108 MW2016-184
MW, ED 2017-01-27
Tokyo Kikai-Shinko-Kaikan Bldg. A compact 8.5-10.5 GHz GaN-on-Si MMIC Amplifier for a low cost transmitter
Jun Kamioka, Masatake Hangai, Kazuhiko Nakahara (Mitsubishi Electric Corp.), Hiroyuki Okazaki (Mitsubishi Electric Corporation), Koji Yamanaka (Mitsubishi Electric Corp.) ED2016-109 MW2016-185
 [more] ED2016-109 MW2016-185
MW, ED 2017-01-27
Tokyo Kikai-Shinko-Kaikan Bldg. C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network
Eigo Kuwata, Atsuo Sugimoto, Hidetoshi Koyama, Yoshitaka Kamo, Ryota Komaru, Koji Yamanaka (Mitsubishi Electric) ED2016-110 MW2016-186
This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Cir... [more] ED2016-110 MW2016-186
MW, ED 2017-01-27
Tokyo Kikai-Shinko-Kaikan Bldg. 30W Output/60% PAE GaN Power Amplifier at X-band 8% Relative Bandwidth Utilizing 0.15um GaN HEMT Technology
Yoshifumi Kawamura, Masatake Hangai, Tomohiro Mizutani, Kenichi Tomiyama, Koji Yamanaka (Mitsubishi Electric) ED2016-111 MW2016-187
In this paper, a 30W-class X-band high-efficiency Internally Matched FET (IMFET) implemented in a 0.15 um GaN HEMT proce... [more] ED2016-111 MW2016-187
MW 2016-11-17
Saga Saga Univ. Semi-Physical Large Signal Model of GaN HEMTs on Si considering temperature dependence of RF leakage current in Substrates
Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric Corp.), Toshiyuki Oishi (Saga Univ.) MW2016-122
In this paper, semi-physical large signal model of GaN HEMTs on Si (GaN-on-Si) considering temperature dependence of RF ... [more] MW2016-122
MW 2016-11-17
Saga Saga Univ. Industrial microwave heating device using GaN amplifier module
Kazuhiro Iyomasa, Koji Yamanaka, Takeshi Shiode, Hiroyuki Mizutani, Masaomi Tsuru, Yoshifumi Kawamura, Takaaki Yoshioka, Yuji Komatsuzaki, Yutaro Yamaguchi, Keigo Nakatani, Ryuta Komaru, Kazutomi Mori, Hiroshi Fukumoto (Mitsubishi Electric Corp.) MW2016-123
(To be available after the conference date) [more] MW2016-123
EMCJ, IEE-EMC, MW, EST [detail] 2016-10-20
Miyagi Tohoku Univ. An RF Frontend Amplifier Module for High SHF Wide-band Massive MIMO in 5G
Keigo Nakatani, Shintaro Shinjo, Yuji Komatsuzaki, Jun Kamioka, Ryota Komaru, Hideyuki Nakamizo, Miyawaki Katsumi, Koji Yamanaka (Mitsubishi Electric) EMCJ2016-64 MW2016-96 EST2016-60
A highly integrated RF frontend module including a three-stage power amplifier (PA), a two-stage low noise amplifier (LN... [more] EMCJ2016-64 MW2016-96 EST2016-60
Ibaraki AIST 60% PAE, 30W X-band and 33% PAE, 100W Ku-Band PAs utilizing 0.15um GaN HEMT Technology
Takuma Torii, Shohei Imai, Hiroaki Maehara, Tetsuo Kunii, Takuo Morimoto, Norihiro Yunoue, Miyo Miyashita, Miyazaki Yasunori, Tsuyama Yoshinori, Koji Yamanaka, Hiroshi Fukumoto (Mitsubishi Electric Corp.) MW2016-83
 [more] MW2016-83
EMT, MW, OPE, MWP, EST, IEE-EMT [detail] 2015-07-17
Hokkaido Kushiro City Lifelong Learning Center Dynamic AM/AM and AM/PM control of Doherty amplifier using tanh-shaped function
Yuji Komatsuzaki, Hiroshi Otsuka, Hifumi Noto, Shintaro Shinjo, Koji Yamanaka, Yoshihiro Hamamatsu, Hiroshi Fukumoto (Mitsubishi Electric Corp.) EMT2015-47 MW2015-85 OPE2015-59 EST2015-51 MWP2015-50
Power amplifiers for communication systems require increasingly high efficiency at large back-off from saturated output ... [more] EMT2015-47 MW2015-85 OPE2015-59 EST2015-51 MWP2015-50
MW 2015-05-28
Tokyo The Univ. of Electro-Commun. Large Signal Modeling of GaN-on-Si Transistor for Microwave Heating
Christer M. Andersson, Yutaro Yamaguchi, Kazuhiro Iyomasa, Yoshifumi Kawamura, Shuichi Sakata, Koji Yamanaka, Hiroshi Fukumoto (Mitsubishi Electric) MW2015-21
In this paper, the large signal model of a GaN-on-Si transistor to be employed in microwave heating systems is reported.... [more] MW2015-21
ED, CPM, SDM 2015-05-28
Aichi Venture Business Laboratory, Toyohashi University of Technology Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes
Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric Corp.) ED2015-23 CPM2015-8 SDM2015-25
In high power Schottky barrier diodes, it is possible to apply a high voltage to Schottky electrodes. In this paper, we ... [more] ED2015-23 CPM2015-8 SDM2015-25
MW, ED 2015-01-16
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] GaN devices employed in infrastructure systems
Koji Yamanaka (Mitsubishi Electric Corp.) ED2014-124 MW2014-188
 [more] ED2014-124 MW2014-188
MW, ED 2015-01-16
Tokyo Kikai-Shinko-Kaikan Bldg. Modeling of traps for GaN HEMT by transient response measurement and TCAD simulation
Yutaro Yamaguchi, Takuma Nanjo, Hidetoshi Koyama, Yoshitaka Kamo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga Univ.) ED2014-129 MW2014-193
In this paper, we reported the result of analysis of traps at the buffer in GaN HEMT by both transient response measurem... [more] ED2014-129 MW2014-193
 Results 1 - 20 of 52  /  [Next]  
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