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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2016-11-11
14:30		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Application of DFT Calculation for the Development of High Quality Si and Ge Substrates -- From Ultra Large Diameter Crystal Pulling to Metal Gettering --
Koji Sueoka (Okayama Pref. Univ.) SDM2016-87		 During the last decade, considerable progress has been made in understanding the properties and behavior of the vacancy ... [more] SDM2016-87
pp.49-54
SDM 2014-11-07
10:50		 Tokyo Kikai-Shinko-Kaikan Bldg. Stress and Doping Impact on Intrinsic Point Defect Behaviour in Growing Single Crystal Silicon
Koji Sueoka, Eiji Kamiyama, Kozo Nakamura (Okayama Pref. Univ.), Jan Vanhellemont (Ghent Univ.) SDM2014-104		 For the mass-production of 450 mm-diameter defect-free Si crystals, one has to take into account the impact of thermal s... [more] SDM2014-104
pp.47-52
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