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 Results 1 - 20 of 35  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2019-08-06
Tokyo Kikai-Shinko-Kaikan Bldg. Effects of the Phase Noise of the oscillators on the Frequency Delta Sigma Modulation Sensors
Koichi Maezawa, Masayuki Mori (Univ. Toyama) ED2019-29
 [more] ED2019-29
ED 2018-08-08
Overseas Kikai-Shinko-Kaikan Bldg. A 10GS/s measurement system using an FPGA for frequency delta-sigma modulation sensors
Koichi Maezawa, Takahiro Yamaoka, Masayuki Mori (Univ. Toyama) ED2018-25
The frequency delta sigma modulation (FDSM) technique is one of the most promising technique for high performance digita... [more] ED2018-25
ED, CPM, SDM 2018-05-24
Aichi Toyohashi Univ. of Tech. (VBL) Growth of high quality InSb channel layer with InxGa1-xSb heteroepitaxial films on Si(111)
A. A. Mohammad Monzur-Ul-Akhir, Masayuki Mori, Koichi Maezawa (University of Toyama) ED2018-17 CPM2018-4 SDM2018-12
InSb has met the requirements of high-performance channel material with faster response towards ultra-fast and very low ... [more] ED2018-17 CPM2018-4 SDM2018-12
ED, THz 2017-12-18
Miyagi RIEC, Tohoku Univ [Invited Talk] Improved stability of resonant tunneling diode oscillators and their application to sensors
Koichi Maezawa (Univ. Toyama) ED2017-76
RTD oscillators are one of the most promising candidates for THz signal sources. However, RTD oscillators have stability... [more] ED2017-76
ED 2017-08-09
Tokyo Kikai-Shinko-Kaikan Bldg. A novel phase shifter for THz applications
Koichi Maezawa, Daisuke Nakano, Masayuki Mori (Univ. of Toyama), Hiromu Ishii (Toyohashi Univ. of Tech.), Hiroya Andoh (NIT, Toyota College) ED2017-31
 [more] ED2017-31
SDM, ED, CPM 2017-05-26
Aichi VBL, Nagoya University Heteroepitaxial Growth of InGaSb Thin Films on GaSb/Si(111)-√3×√3-Ga Surface Phase
Md.Monzur-ul-akhir, Masayuki Mori, Hiroya Shimoyama, Koichi Maezawa (Univ. of Toyama) ED2017-23 CPM2017-9 SDM2017-17
 [more] ED2017-23 CPM2017-9 SDM2017-17
ED, SDM 2017-02-24
Hokkaido Centennial Hall, Hokkaido Univ. Linear model analysis of the high order harmonic generation of the transmission line oscillator loaded with resonant tunneling diodes
Koichi Maezawa, Takuro Kishi, Masayuki Mori (Univ. Toyama) ED2016-133 SDM2016-150
Small signal linear analysis was applied to the transmission line oscillators loaded with RTD pairs,which can output a h... [more] ED2016-133 SDM2016-150
ED 2016-08-10
Tokyo Kikai-Shinko-Kaikan Bldg. Application of the Frequency Delta Sigma Modulator to Digital-Output Sensors
Koichi Maezawa, Shunya Fujino, Takahiro Yamaoka, Masaki Yamakawa, Tomoki Shimada, Yuichiro Kakutani, Takumi Tajika, Masayuki Mori (Univ. Toyama) ED2016-42
 [more] ED2016-42
ED 2016-07-23
Tokyo Tokyo Metropolitan Univ. Minami-Osawa Campus, International House Heteroepitaxial Growth of InSb thin films on a Ge(111) substrate
Takaaki Mitsueda, Masayuki Mori, Koichi Maezawa (Univ. Toyama) ED2016-31
Recently, the improvement of the performance by the reduction in device size of the semiconductor device with Si is reac... [more] ED2016-31
CPM, ED, SDM 2016-05-20
Shizuoka Shizuoka University, Hamamatsu campus (Joint Research Lab.) Heteroepitaxial Growth of GaSb Films on Si(111)-√3x√3-Ga Surface Phase
Hiroya Shimoyama, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2016-24 CPM2016-12 SDM2016-29
The heteroepitaxial growth of GaSb films via Ga-induced surface phase (Si(111)-√3×√3-Ga) on Si(111) was studied. The gro... [more] ED2016-24 CPM2016-12 SDM2016-29
ED, SDM 2016-03-04
Hokkaido Centennial Hall, Hokkaido Univ. Delta Sigma Modulation Microphone Sensors Using a HEMT and a Cavity Resonator
Takahiro Yamaoka, Shunya Fujino, Ryo Yamagishi, Masaki Yamakawa, Tomoki Shimada, Masayuki Mori, Koichi Maezawa (Univ. Toyama) ED2015-129 SDM2015-136
 [more] ED2015-129 SDM2015-136
CPM, OPE, LQE, R, EMD 2015-08-27
Aomori Aomori-Bussankan-Asupamu [Invited Talk] Heterogeneous Integration Technology Using Fluidic Self Assembly Based on Ga Molten Bumps
Koichi Maezawa, Jun Nakano, Tomoaki Shibata, Hiroki Morita, Hiroshi Sakamoto, Satoshi Yamada, Masayuki Mori (Univ. Toyama) R2015-28 EMD2015-36 CPM2015-52 OPE2015-67 LQE2015-36
Fluidic Self Assembly (FSA) is a most promising heterogeneous integration technique leading to new applications of semic... [more] R2015-28 EMD2015-36 CPM2015-52 OPE2015-67 LQE2015-36
ED 2015-07-25
Ishikawa IT Business Plaza Musashi 5F Delta-Sigma Strain Sensor Using a Resonant Tunneling Diode
Koichi Maezawa, Yuichiro Kakutani, Taishu Nakayama, Takumi Tajika, Masayuki Mori (Univ. Toyama) ED2015-46
A negative differential resistance (NDR) of resonant tunneling diodes (RTDs) is a basis for high frequency oscillators. ... [more] ED2015-46
SDM, ED 2015-02-05
Hokkaido Hokkaido Univ. Higher frequency signal detection than the fundamental oscillation frequency in resonant tunneling super regenerative detectors
Koichi Maezawa, Jie Pan, Yuichiro Kakutani, Taishu Nakayama, Masayuki Mori (Univ. Toyama) ED2014-146 SDM2014-155
 [more] ED2014-146 SDM2014-155
ED, SDM 2014-02-28
Hokkaido Hokkaido Univ. Centennial Hall Application of resonant tunneling diode oscillators to sensors
Koichi Maezawa, Jie Pan, Yuichiro Kakutani, Jun Nakano, Masayuki Mori (Univ. of Toyama) ED2013-143 SDM2013-158
A negative differential resistance (NDR) of resonant tunneling diodes (RTDs) is a basis for high frequency oscillators. ... [more] ED2013-143 SDM2013-158
ED 2013-08-08
Toyama University of Toyama Ultrashort Pulse Generators Using Resonant Tunneling Diodes with Improved Power Performance
Dongpo Wu, Katsutaro Mizumaki, Jie Pan, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-37
RTD pulse generators were designed and fabricated for improved power performance. 10-ps class pulse width with higher pe... [more] ED2013-37
ED 2013-08-08
Toyama University of Toyama Fluidic Self-Assembly for Heterogeneous Integration of High Performance Resonant Tunneling Diodes using Molten Gallium Bumps
Jun Nakano, Tomoaki Shibata, Hiroki Morita, Hiroshi Sakamoto, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-38
Fluidic Self-Assembly (FSA) using molten metal bumps is one of the most promising Heterogeneous Integration (HI) technol... [more] ED2013-38
ED 2013-08-09
Toyama University of Toyama MEMS Microphones on InP Substrates for High Performance Digital Ultrasonic Sensors
Shunya Fujino, Yuta Mizuno, Kazuhiro Takaoka, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-44
This paper describes the fabrication process of the MEMS microphones on InP substrates. The process is based on ozone as... [more] ED2013-44
ED 2013-08-09
Toyama University of Toyama Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction
Wang Xin, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-49
Recently, devices with three-dimensional structure such as nanowire field effect transistor (NW-FETs) and FinFETs has ex... [more] ED2013-49
SDM, ED 2013-02-27
Hokkaido Hokkaido Univ. Al2O3/InSb MOSFETs using an ultra thin InSb layer grown directly on a Si substrate
Koichi Maezawa, Taihei Ito, Azusa Kadoda, Koji Nakayama, Yuichiro Yasui, Masayuki Mori (Univ. of Toyama), Eiji Miyazaki, Takashi Mizutani (Nagoya Univ.) ED2012-135 SDM2012-164
Al2O3/InSb/Si MOSFETs were fabricated with a thin InSb channel layer grown directly on Si(111) substrates. The InSb thic... [more] ED2012-135 SDM2012-164
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