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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 15 of 15  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM, ITE-IST [detail] 2020-08-07
09:30
Online Online [Invited Talk] Understanding the Origin of Low-frequency Noise in Cryo-CMOS Toward Long-coherence-time Si Spin Qubit
Hiroshi Oka, Takashi Matsukawa, Kimihiko Kato, Shota Iizuka, Wataru Mizubayashi, Kazuhiko Endo, Tetsuji Yasuda, Takahiro Mori (AIST) SDM2020-6 ICD2020-6
Si quantum computer has attracted a significant attention due to its potential for large-scale integration using semicon... [more] SDM2020-6 ICD2020-6
pp.25-30
SDM, ICD, ITE-IST [detail] 2019-08-09
10:15
Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and Fabrication and electrical characteristics of amorphous-ZnSnO/Si bilayer tunnel FETs
Kimihiko Kato (Univ. of Tokyo/AIST), Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2019-46 ICD2019-11
We have examined impact of an amorphous ZnSnO channel layer with high thickness uniformity on electrical characteristics... [more] SDM2019-46 ICD2019-11
pp.63-66
SDM 2018-11-08
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Proposal and device design of tunneling field effect transistor with oxide semiconductor and group-IV semiconductor
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2018-66
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] SDM2018-66
pp.11-16
SDM 2018-01-30
11:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2017-92
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] SDM2017-92
pp.5-8
SDM 2014-06-19
10:10
Aichi VBL, Nagoya Univ. Alleviation of Fermi level pinning of Sn/Ge contact
Akihiro Suzuki, Shunsuke Asaba, Jun Yokoi, Masashi Kurosawa, Kimihiko Kato, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-45
 [more] SDM2014-45
pp.11-16
SDM 2013-06-18
09:00
Tokyo Kikai-Shinko-Kaikan Bldg. Control of Pr-Oxide Crystalline Phase by Regulating Oxidant Partial Pressure and Si Diffusion
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-44
For realization of hexagonal Pr2O3 thin film as higher-k gate dielectrics, we have investigated the effect of H2O partia... [more] SDM2013-44
pp.1-6
SDM 2013-06-18
09:20
Tokyo Kikai-Shinko-Kaikan Bldg. Formation of Ultra Thin GeO2 Film Using Tetraethoxy-Germanium
Teppei Yoshida, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-45
For realizing three-dimensional Ge channel MOSFET, fabrication of good interface property of high-k/Ge structure, and un... [more] SDM2013-45
pp.7-11
SDM 2013-06-18
09:40
Tokyo Kikai-Shinko-Kaikan Bldg. Clarification of oxidation mechanisms in Al2O3/Ge structure and impact of interface reactions on interface properties
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-46
Currently, it is reported that the Ge surface oxidation through the thin Al2O3 layer using oxygen plasma (post plasma ox... [more] SDM2013-46
pp.13-18
SDM, ED
(Workshop)
2012-06-28
10:00
Okinawa Okinawa Seinen-kaikan Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures
Kusumandari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
Low temperature processes such as plasma process are required for realizing Ge metal-oxide-semiconductor field effect tr... [more]
SDM 2012-06-21
10:55
Aichi VBL, Nagoya Univ. Clarification of Interfacial Reaction Mechanism in O2 Annealing or O radical Process for Al2O3/Ge Structure
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-48
To realize a high performance Ge MOSFET, it is quite important to achieve simultaneously the low interface state density... [more] SDM2012-48
pp.27-32
SDM 2012-06-21
11:35
Aichi VBL, Nagoya Univ. Effect of Reducing Character of Gate Metals on Pr Valence State in Pr Oxide Film on Ge Substrate
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-50
We have investigated the impact of the gate metal on the chemical bonding state in the metal/Pr-oxide/Ge gate stack stru... [more] SDM2012-50
pp.37-42
SDM 2011-07-04
11:40
Aichi VBL, Nagoya Univ. Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure
Kusuman Dari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-57
We have investigated the effect of light induced damages on the electrical properties of the Al2O3/Ge gate stack structu... [more] SDM2011-57
pp.41-46
SDM 2011-07-04
13:20
Aichi VBL, Nagoya Univ. Effect of O2 Annealing for Al2O3/Ge Structure on Interfacial Properties
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-59
For realizing the next generation complementary metal-oxide-semiconductor field-effect-transistors (CMOSFETs), High-k/Ge... [more] SDM2011-59
pp.51-56
SDM 2011-07-04
13:40
Aichi VBL, Nagoya Univ. Control of Interfacial Reactions in Pr Oxide/Ge Structures Based on Valence State of Pr
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-60
We have investigated the electrical properties and chemical bonding state of praseodymium (Pr) oxide/Ge and Pr oxide/Pr ... [more] SDM2011-60
pp.57-62
SDM 2009-06-19
13:20
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation
Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-33
To realize high mobility Ge channel metal-oxide-semiconductor field-effect-transistor (MOSFET), it is necessary to estab... [more] SDM2009-33
pp.39-44
 Results 1 - 15 of 15  /   
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