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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM | 2014-10-24 15:20 |
Nagano | Effect of Post-Deposition Annealing in Hydrogen Atmosphere on 4H-SiCMIS Property Prepared by Thermal CVD Method Using Tetraethylorthosilicate Takuo Kanou, Yoshiyuki Akahane, Yuta Kobayashi, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.)  CPM2014-109 |
Silicon dioxide films were deposited by the thermal decomposition of tetraethylorthosilicate (TEOS) to form the MIS stru... [more] | CPM2014-109 pp.25-28 |
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| CPM | 2014-09-04 14:20 |
Yamagata | The 100th Anniversary Hall, Yamagata University | Preparation of Plasma Nitridation Layer on SiC Surface and Examination of Its Thermal Stability Yoshiyuki Akahane, Takuo Kanou, Kouya Ogino, Yuuta Kobayashi, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.) CPM2014-77 |
[more] | CPM2014-77 pp.13-16 |
| CPM | 2013-10-24 15:50 |
Niigata | Niigata Univ. Satellite Campus TOKIMEITO | Fabrication of Carbon Nanotubes by Thermal Chemical Vapor Deposition Using Alcohol as Carbon Source Naoki Kubo, Keisuke Yamada, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.) CPM2013-98 |
Carbon nanotubes (CNTs) are studied in many fields due to their mechanical, thermal and chemical properties. In vacuum n... [more] | CPM2013-98 pp.27-30 |
| CPM | 2013-10-25 11:25 |
Niigata | Niigata Univ. Satellite Campus TOKIMEITO | Field Emission from the Cold-Cathode using CNTs Dispersed in Insulating Layer Yuji Asada, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.) CPM2013-106 |
Field emission cathode was fabricated using the compound of carbon-nanotube and insulator. High field enhancement factor... [more] | CPM2013-106 pp.63-66 |
| CPM | 2013-08-01 14:30 |
Hokkaido | Formation Mechanism of Cubic-SiC by Carbonization of Si Surface Yukimune Watanabe, Kiichi Kamimura (Shinshu Univ.) CPM2013-42 |
SiC materials for high-power devices and high-frequency devices are actively developed. In this study, we focus on a cub... [more] | CPM2013-42 pp.17-20 |
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| CPM | 2013-08-01 15:05 |
Hokkaido | Development of high precision rotary encoder Takashi Fujimoto (Tamagawa seiki), Kiichi Kamimura (Shinshu Univ) CPM2013-43 |
[more] | CPM2013-43 pp.21-24 |
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| CPM | 2012-10-27 11:25 |
Niigata | Field Emission Characteristics Considering both the Shield Effect and Series Resistance Yuji Asada, Masahiro Yamashita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2012-109 |
To estimate the effects of series resistance on the field emission current associated with an array of carbon nanotubes ... [more] | CPM2012-109 pp.87-90 |
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| CPM | 2011-10-27 09:55 |
Fukui | Fukui Univ. | Preparation of SiC MOS structure using SiO2 Layer deposited by Thermal Decomposition of TEOS Mitsunori Hemmi, Yuya Iguchi, Takashi Sakai, Akihiko Sugita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2011-119 |
A oxide layer was deposited on a SiC surface by thermal chemical vapor deposition as a source material TEOS. After the d... [more] | CPM2011-119 pp.51-54 |
| CPM | 2011-08-10 13:50 |
Aomori | Direct Nitridation of SiC Surface and Characterization of Nitride/SiC Interface Takashi Sakai, Mitsunori Hemmi, Yusuke Murata, Shinichiro Suzuki, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2011-58 |
A nitride layer was formed on a SiC surface by direct nitridation method to use an interfacial layer of the SiC MIS stru... [more] | CPM2011-58 pp.11-14 |
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| CPM | 2010-10-29 09:25 |
Nagano | Estimation of nitride layer thickness and characterization of the interface between SiC and nitride layer prepared by direct nitridation Shinichiro Suzuki, Yusuke Murata, Mitsunori Henmi, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2010-100 |
A nitride layer was formed on a SiC surface by direct nitridation in N$_{2}$ or NH$_{3}$. The surface was characterized ... [more] | CPM2010-100 pp.47-50 |
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| CPM | 2010-10-29 09:50 |
Nagano | Estimation of interface state density at nitride/SiC interface using current-voltage characteristics of MIS Schottky contact Yusuke Murata, Shinichiro Suzuki, Shohei Kobayashi, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2010-101 |
The nitride film was formed by direct nitridation with NH$_3$ on n type 4H-SiC to form an MIS Schottky diode. Ideality f... [more] | CPM2010-101 pp.51-54 |
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| CPM | 2010-07-30 10:55 |
Hokkaido | Michino-Eki Shari Meeting Room | Field Emission from Horizontally Aligned Carbon Nanotube Hirofumi Saito, Tomohiko Yamakami, Rinpei Hayashibe, Takumi Ooike, Masahiro Yamashita, Kiichi Kamimura (Shinshu Univ.) CPM2010-39 |
To estimate the field emission current associated with an array of carbon nanotubes (CNTs) parallel to a planar cathode ... [more] | CPM2010-39 pp.45-48 |
| CPM | 2009-10-29 16:15 |
Toyama | Toyama Prefectural University | Fabrication and Characterization of Cold Cathode using Carbon Nanotubes Dispersed in Insulator. Hirofumi Saito, Tatsuya Hagino, Junnki Matsumoto, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2009-93 |
Field emission cathode was fabricated using mixed compound of carbon nanotube and insulator. High field enhancement acto... [more] | CPM2009-93 pp.17-20 |
| CPM | 2009-08-10 15:30 |
Aomori | Hirosaki Univ. | Fabrication of SiC MIS structure using direct nitridation layer as an interfacial layer Shinichiro Suzuki, Akira Sengoku, Takuma Tsuji, Mitsunori Henmi, Yusuke Murata, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2009-35 |
Interface state density was estimated from diode factor $n$ of SiC MIS Schottky diode. The interface state density was t... [more] | CPM2009-35 pp.9-12 |
| CPM | 2008-10-31 11:20 |
Niigata | Niigata Univ. | Field Emission Cathod Prepared with Carbon Nano-tubes Distributed in Insulation Film Hirofumi Saito, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2008-87 |
It was proposed that a field emission cathode with high efficiency could be prepared from carbon nanotubes distributed i... [more] | CPM2008-87 pp.71-74 |
| CPM | 2008-08-04 14:25 |
Hokkaido | Muroran Institute of Technology | Field Emission Characteristics of Sputter Deposited Carbon Films Kei Miyazaki, Yoshiyuki Taguchi, Hirofumi Saito, Takuya Miyanaga, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2008-42 |
The field emission characteristics of sputter deposited carbon films were measured and discussed. The low threshold fie... [more] | CPM2008-42 pp.5-8 |
| CPM | 2007-11-17 10:15 |
Niigata | Nagaoka University of Technology | Fabrication of SiC MIS Structure by RF Plasma Assisted Nitridation with DC Bias. Yoshiki Ishida, Chen Chen, Masataka Hagihara, Hiroaki Shiozawa, Akira Sengoku, Rinpei Hayashibe, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.) CPM2007-118 |
Nitride layer was formed on the surface of 4H-SiC by plasma assisted nitridation. The XPS measurement suggested that the... [more] | CPM2007-118 pp.69-72 |
| CPM | 2006-11-09 15:45 |
Ishikawa | Kanazawa Univ. | Reactive Sputter Deposition of AlN Film and Its Application to LD Submount Akihiro Shiono, Masahide Nakakuki, Isao Kobayashi, Tomohiko Yamakami, Rinpei Hayashibe (Shinshu Univ.), Motoki Obata (CITIZEN FINE TECH), Katsuya Abe, Kiichi Kamimura (Shinshu Univ.) |
[more] | CPM2006-118 pp.31-35 |
| ED, CPM, LQE | 2006-10-06 16:00 |
Kyoto | Direct nitridation of SiC surface and characterization of nitride layer by XPS Tetsuo Yamaguchi, Yoshiki Ishida, Chen Chen, Masataka Hagihara, Rinpei Hayashibe, Tomohiko Yamakami, Katsuya Abe, Kiichi Kamimura (Shinshu Univ.) |
[more] | ED2006-173 CPM2006-110 LQE2006-77 pp.113-116 |
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| CPM | 2005-11-11 15:10 |
Fukui | Characterization of insulating nitride films grown on 6H-SiC by plasma nitridation method Tetsuo Yamaguchi, YingShen Liu, Yoshiki Ishida, Tomohiko Yamakami, Rinpei Hayashibe, Katsuya Abe, Kiichi Kamimura (Shinshu Univ.) |
The quality of SiC-MOS devices has been critically limited by carbon related defects in the SiC oxide film grown by ther... [more] | CPM2005-156 pp.25-28 |
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