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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2018-01-25
Tokyo Kikai-Shinko-Kaikan Bldg. Improvement of Current Linearity in Inslated Gate AlGaN/GaN HEMT
Shota Kaneki, Kenya Nishiguchi (Hokkaido Univ.), Siro Ozaki (Fujitsu Lab.), Tamotsu Hashizume (Hokkaido Univ.) ED2017-95 MW2017-164
 [more] ED2017-95 MW2017-164
LQE, ED, CPM 2014-11-28
Osaka   Surface charging effects in AlGaN/GaN HEMTs induced by off-stress bias
Kenya Nishiguchi, Tamotsu Hashizume (Hokkaido Univ.) ED2014-92 CPM2014-149 LQE2014-120
 [more] ED2014-92 CPM2014-149 LQE2014-120
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