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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2016-12-13
Kyoto Kyoto University Growth and application of corundum-structured n- and p-type wide band gap oxide semiconductors
Kentaro Kaneko (Kyoto Univ.), Toshimi Hitora (FLOSFIA INC.), Shizuo Fujita (Kyoto Univ.) ED2016-74 CPM2016-107 LQE2016-90
Electronic carrier concentrations in corundum-structured α-In2O3 thin films decreased by being doped with a Mg ion. A M... [more] ED2016-74 CPM2016-107 LQE2016-90
CPM, LQE, ED 2016-12-13
Kyoto Kyoto University Growth and Conductivity Control of Corundum-Structured Gallium Oxides on Sapphire Substrates
Kazuaki Akaiwa, Kunio Ichino (Tottori Univ), Kentaro Kaneko, Shizuo Fujita (Kyoto Univ) ED2016-79 CPM2016-112 LQE2016-95
 [more] ED2016-79 CPM2016-112 LQE2016-95
ED, CPM, SDM 2015-05-28
Aichi Venture Business Laboratory, Toyohashi University of Technology Growth and preliminary MOSFETs of corundum-structured oxide semiconductors
Yoshito Ito, Kentaro Kaneko, Shizuo Fujita (Kyoto Univ.) ED2015-21 CPM2015-6 SDM2015-23
Growth of corundum-structured oxide semiconductors has been demonstrated using appropriate buffer layers on sapphire by ... [more] ED2015-21 CPM2015-6 SDM2015-23
CPM, ED, SDM 2014-05-29
Aichi   Electrical characterization of corundum-structured oxides for device applications
Kentaro Kaneko, Norihiro Suzuki, Sam-Dong Lee, Masashi Kitajima, Kazuaki Akaiwa, Shizuo Fujita (Kyoto Univ.)
We investigated electrical properties of α-In2O3 thin films fabricated on c-cut sapphire substrates by a mist chemical v... [more]
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