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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, CPM, ED 2020-11-26
15:50
Online Online GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3
Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.), Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura (Kumamoto Univ.) ED2020-13 CPM2020-34 LQE2020-64
We have fabricated AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Al2O3 ga... [more] ED2020-13 CPM2020-34 LQE2020-64
pp.49-52
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