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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2013-11-29
11:00
Osaka   Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate
Masayoshi Katagiri, Kenta Izumi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hidehiko Oku, Hidetoshi Asamura, Keisuke Kawamura (Air Water R&D) ED2013-79 CPM2013-138 LQE2013-114
Since GaN is desired for optical and electronic devices, therefore reduction of substrate cost is very important topic. ... [more] ED2013-79 CPM2013-138 LQE2013-114
pp.71-74
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