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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2008-11-28
09:25
Aichi Nagoya Institute of Technology Analysis of AlGaN Growth on MOVPE by Computational Simulation
Akira Hirako, Masaya Ichikawa, Kennichi Nakamura, Kazuhiro Ohkawa (Tokyo Univ. of Sci.) ED2008-170 CPM2008-119 LQE2008-114
We have reported analysis of reaction pathways in metalorganic vapor-phase epitaxy (MOVPE) of GaN and AlN films by using... [more] ED2008-170 CPM2008-119 LQE2008-114
pp.89-92
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