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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2012-06-21 16:35 |
Aichi | VBL, Nagoya Univ. | Interface controlled silicide Schottky S/D for future 3D devices Yuta Tamura, Ryo Yoshihara, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech)  SDM2012-59 |
This paper presents Ni/Si stacked-structure as interface control for silicidation. An atomically flat $NiSi_2$ film inte... [more] | SDM2012-59 pp.87-92 |
| SDM | 2011-07-04 09:00 |
Aichi | VBL, Nagoya Univ. | High Temperature Annealing with MIPS Structure for Improving Interfacial Property at La-silicate/Si Interface and Achieving Scaled EOT Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2011-50 |
This paper reports our experimental study for further EOT scaling with small interface state density based on controllin... [more] | SDM2011-50 pp.1-5 |
| SDM | 2011-07-04 10:00 |
Aichi | VBL, Nagoya Univ. | Defect analysis of HfO2/In0.53Ga0.47As interface using capacitance-voltage and conductance methods Darius Zade, Ryuji Hosoi, Ahmet Parhat, Kuniyuki Kakushima, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2011-53 |
The changes in electrical characteristics of W/HfO2or La2O3/ In0.53Ga0.47As capacitors by wet chemical treatment before ... [more] | SDM2011-53 pp.17-22 |
| SDM | 2010-06-22 09:30 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | A Compact Modeling of Si Nanowire MOSFETs
-- Ballistic and Quasi-Ballistic Transport -- Kenji Natori (Tokyo Inst. of Tech.) SDM2010-33 |
A compact model of ballistic Si nanowire MOSFET is disclosed and the device characteristics are discussed. Then a carrie... [more] | SDM2010-33 pp.1-4 |
| SDM | 2010-06-22 10:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | An Analysis of Electrical Carrier Mobility of Silicon Nanowire FET Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet (Tokyo Inst. of Tech.), Kenji Ohmori (Waseda Univ.), Kenji Natori, Hiroshi Iwai (Tokyo Inst. of Tech.), Keisaku Yamada (Waseda Univ.) SDM2010-35 |
Silicon nanowire FET is expected to have high ION and low IOFF compared with planar FET, which results in low-power cons... [more] | SDM2010-35 pp.11-16 |
| SDM | 2010-06-22 10:45 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Nickel silicide Encroachment in Silicon Nanowire and its Suppression Naoto Shigemori, Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2010-36 |
Ni silicide in the Si Nanowire shows a reaction different from the reaction with the bulk substrate from the influence o... [more] | SDM2010-36 pp.17-22 |
| SDM | 2010-06-22 13:45 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | High Temperature Rapid Thermal Annealing of Rare-Earth Oxides Dielectrics for Highly Scaled Gate Stack of EOT=0.5 nm Daisuke Kitayama, Tomotsune Koyanagi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2010-41 |
A direct contact of high-k/Si substrate (without SiO<sub>2</sub> interfacial layer structure) is required for achieving ... [more] | SDM2010-41 pp.43-48 |
| SDM [detail] | 2008-11-14 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | High-field Transport in Silicon Analyzed by Flux Equation Naohito Morozumi, Kenji Natori (Univ. of Tsukuba) SDM2008-181 |
The influence of the energy relaxation due to the optical phonon emission on the high-field transport property is invest... [more] | SDM2008-181 pp.71-76 |
| USN, CQ, MoNA (Joint) |
2008-01-25 11:20 |
Shizuoka | Kenshu Kouryu Center, Actcity Hamamatsu (Shizuoka) | [Technology Exhibit]
Haptic Communication Technology in Mobile Environments Kouki Hayashi, Minoru Takahata (NTT DoCoMo), Kenji Natori, Tomoyuki Shimono, Kouhei Ohnishi (Keio Univ.) MoMuC2007-86 USN2007-79 |
One of the biggest issues of bilateral haptic communication is the stability control under the varying time delay. Hence... [more] | MoMuC2007-86 USN2007-79 pp.87-88(MoMuC), pp.103-104(USN) |
| PRMU | 2006-03-17 11:15 |
Fukuoka | Kyushu Univ. | Viewpoint independnent face recognition by principal component analysis of multi-oriented view images Tatsuya Hosoi (Tsukuba Univ), Takio Kurita (AIST), Kenji Natori (Tsukuba Univ) |
[more] | PRMU2005-269 pp.69-74 |
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