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 Results 1 - 12 of 12  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2014-01-17
Tokyo Kikai-Shinko-Kaikan Bldg. Low-Power, Linear Driver Module for InP MZM
Hitoshi Wakita, Munehiko Nagatani, Miwa Mutoh, Satoshi Tsunashima, Hiroyuki Fukuyama, Hideyuki Nosaka, Norihide Kashio, Minoru Ida, Kenji Kurishima (NTT) ED2013-130 MW2013-195
In this paper, the characteristics of InP MZM driver module are presented. The linear driver IC that was implemented in... [more] ED2013-130 MW2013-195
ED, MW 2012-01-12
Tokyo Kikai-Shinko-Kaikan Bldg Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition
Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida (NTT) ED2011-130 MW2011-153
Because of the significant increase of data traffic, there is now a strong demand for reducing the power consumptions of... [more] ED2011-130 MW2011-153
ED, MW 2012-01-12
Tokyo Kikai-Shinko-Kaikan Bldg A 60-GS/s Digital-to-Analog Converter using 0.5-um InP HBTs for Optical Communication Systems
Munehiko Nagatani, Hideyuki Nosaka, Kimikazu Sano, Koichi Murata, Kenji Kurishima, Minoru Ida (NTT) ED2011-131 MW2011-154
High-order multi-level modulation formats, such as 16-QAM and 64-QAM, are promising techniques for constructing beyond-1... [more] ED2011-131 MW2011-154
ED, MW 2012-01-12
Tokyo Kikai-Shinko-Kaikan Bldg Components in 0.5-um-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
Yves Bouvier, Munehiko Nagatani, Kimikazu Sano, Koichi Murata, Kenji Kurishima, Minoru Ida (NTT) ED2011-132 MW2011-155
Two basic components for high-speed and low-power applications, a static frequency divider and decision circuit, have be... [more] ED2011-132 MW2011-155
ED, SDM 2010-06-30
Tokyo Tokyo Inst. of Tech. Ookayama Campus Reliability study on the emitter-base junction for high-speed sub-micron InP HBTs
Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Shoji Yamahata (NTT Photonics Labs.) ED2010-70 SDM2010-71
 [more] ED2010-70 SDM2010-71
R 2009-11-20
Osaka   Emitter - metal - related degradation in InP-based HBTs and its suppression by introducing refractory metal
Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Minoru Ida, Shoji Yamahata, Takatomo Enoki (NTT Corp.) R2009-43
 [more] R2009-43
MW, ED 2009-01-15
Tokyo Kikai-Shinko-Kaikan Bldg Two-channel InP HBT Differential Automatic-gain-control Transimpedance Amplifier IC for 43-Gbit/s DQPSK Photoreceiver
Hiroyuki Fukuyama, Toshihiro Itoh, Tomofumi Furuta, Kenji Kurishima, Masami Tokumitsu, Koichi Murata (NTT) ED2008-213 MW2008-178
We have developed a two-channel automatic-gain-control transimpedance amplifier IC by using InP heterojunction bipolar t... [more] ED2008-213 MW2008-178
ED, MW 2008-01-17
Tokyo Kikai-Shinko-Kaikan Bldg. Highly reliable 0.5-um-emitter InP/InGaAs HBT
Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai, Shoji Yamahata (NTT) ED2007-218 MW2007-149
 [more] ED2007-218 MW2007-149
ED, SDM 2007-06-25
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea [Invited Talk] High-performance and reliable InP/InGaAs HBTs operating at high current density
Shoji Yamahata, Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai (NTT), Yasuyuki Miyamoto (TOKYO TECH)
This paper describes the high-performance and reliability of scaled InP/InGaAs HBTs with a passivation ledge structure a... [more]
ED, MW 2006-01-18
Tokyo Kikai-Shinko-Kaikan Bldg. Up to 80-Gbit/s Operations of 1:4 Demultiplexer IC with InP HBTs
Kimikazu Sano, Hiroyuki Fukuyama, Koichi Murata, Kenji Kurishima, Norihide Kashio, Takatomo Enoki, Hirohiko Sugahara (NTT PH Labo.)
 [more] ED2005-194 MW2005-148
R, ED, SDM 2005-11-25
Osaka Central Electric Club Highly reliable InP-based HBTs with a ledge structure operating at current density over 2mA/um2
Yoshino K. Fukai, Kenji Kurishima, Minoru Ida, Shoji Yamahata, Takatomo Enoki (NTT Photonics Labs.)
 [more] R2005-43 ED2005-178 SDM2005-197
OCS, OPE, LQE 2005-11-03
Fukuoka   100-GHz Optoelectric Integrated Circuits using InP HBTs and a UTC-PD
Norihide Kashio, Kenji Kurishima, Kimikazu Sano, Minoru Ida, Noriyuki Watanabe, Hiroyuki Fukuyama, Hirohiko Sugahara, Masami Tokumitsu, Takatomo Enoki (NTT)
We have monolithically integrated InP HBTs and a UTC-PD by a non-selective regrowth technique. The HBT shows an ft of 26... [more] OCS2005-56 OPE2005-86 LQE2005-94
 Results 1 - 12 of 12  /   
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