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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2009-04-14
13:50
Miyagi Daikanso (Matsushima, Miyagi) A 7.8MB/s 64Gb 4bit/Cell NAND Flash Memory in 43nm CMOS
Mitsuaki Honma (Toshiba Corp.), Cuong Trinh (SanDisk Corp.), Noboru Shibata, Takeshi Nakai, Mikio Ogawa, Junpei Sato, Yoshikazu Takeyama, Katsuaki Isobe (Toshiba Corp.), Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei (SanDisk Corp.), Kiyoaki Iwasa (Toshiba Corp.) ICD2009-9
A 4bit/cell with 43nm CMOS technology NAND flash memory is realized.
64Gb/die is largest capacity.
To achieve 16 leve... [more]
ICD2009-9
pp.43-46
ICD, SDM 2005-08-19
14:15
Hokkaido HAKODATE KOKUSAI HOTEL Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories
Kazuo Otsuga, Hideaki Kurata (Hitachi, Ltd.), Kenji Kozakai, Satoshi Noda (Renesas), Yoshitaka Sasago, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi (Hitachi, Ltd.)
We developed a selective-capacitance constant-charge-injection programming scheme for multilevel AG-AND flash memories. ... [more] SDM2005-153 ICD2005-92
pp.61-66
ICD 2005-04-14
16:15
Fukuoka   4Gb Multilevel AG-AND Flash Memory with 10MB/s Programming Throughput
Hideaki Kurata, Yoshitaka Sasago, Kazuo Otsuga, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi, Hitoshi Kume (Hitachi), Kazuki Homma, Kenji Kozakai, Satoshi Noda, Teruhiko Ito, Masahiro Shimizu, Yoshihiro Ikeda, Osamu Tsuchiya, Kazunori Furusawa (RENESAS)
We fabricated a 4Gb multilevel AG-AND flash memory using 90nm CMOS technology. By using an inversion-layer local-bitline... [more] ICD2005-11
pp.53-58
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