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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, CPM, ED, EID, EMD, MRIS, OME, SCE, SDM, QIT
(Joint) [detail]		 2017-01-31
15:25		 Hiroshima Miyajima-Morino-Yado(Hiroshima) A 5.92-Mb/mm2 28-nm Pseudo 2-Read/Write Dual-Port SRAM Using Double Pumping Circuitry
Yuichiro Ishii, Makoto Yabuuchi, Yohei Sawada, Masao Morimoto, Yasumasa Tsukamoto (Renesas Electronics), Yuta Yoshida, Ken Shibata, Toshiaki Sano (Renesas System Design), Shinji Tanaka, Koji Nii (Renesas Electronics) EMD2016-86 MR2016-58 SCE2016-64 EID2016-65 ED2016-129 CPM2016-130 SDM2016-129 ICD2016-117 OME2016-98		 We propose pseudo dual-port (DP) SRAM by using 6T single-port (SP) SRAM bitcell with double pumping circuitry, which ena... [more] EMD2016-86 MR2016-58 SCE2016-64 EID2016-65 ED2016-129 CPM2016-130 SDM2016-129 ICD2016-117 OME2016-98
pp.87-92
MBE, NC
(Joint)		 2016-03-23
16:00		 Tokyo Tamagawa University Classification of binocular disparities of a three-layered neural network with inputs of hybrid-type disparity detectors
Ken Shibata, Hiroki Tanaka (Kyoto Sangyo Univ.) NC2015-89		 Binocular complex neurons in the primary visual cortex (V1) are successfully modeled as “hybrid-type” disparity-energy u... [more] NC2015-89
pp.113-117
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