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Committee Date Time Place Paper Title / Authors Abstract Paper #
EMT, EST, LQE, MWP, OPE, PEM, PN, IEE-EMT [detail] 2018-01-25
10:20		 Hyogo   Current-injection two-color lasing at room temperature using a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding
Xiangmeng Lu, Yasuo Minami (Tokushima Univ.), Naoto Kumagai (AIST), Ken Morita (Chiba Univ.), Takahiro Kitada (Tokushima Univ.) PN2017-40 EMT2017-77 OPE2017-118 LQE2017-100 EST2017-76 MWP2017-53		 We have investigated a novel kind of surface-emitting THz device based on a GaAs/AlGaAs coupled multilayer cavity, in wh... [more] PN2017-40 EMT2017-77 OPE2017-118 LQE2017-100 EST2017-76 MWP2017-53
pp.9-14
ED 2012-12-17
14:15		 Miyagi Tohoku University [Invited Talk] Generation of Terahertz Radiation from a Semiconductor Coupled Multilayer Cavity
Ken Morita, Takahiro Kitada, Toshiro Isu (Univ. of Tokusima) ED2012-96		 We have proposed GaAs/AlAs coupled multilayer cavity structure as terahertz (THz) emission devices. In thestructure, the... [more] ED2012-96
pp.17-21
OPE, OFT 2012-03-02
14:00		 Tokyo   Ultrafast All-Optical Switches using Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Strain-Relaxed Barriers
Ken Morita, Hyuga Ueyama, Takahiro Kitada, Toshiro Isu (Univ. of Tokushima) OFT2011-79 OPE2011-205		 In this work, time-resolved optical measurements of GaAs/AlAs multilayer cavities with the Er-doped InAs quantum dots (Q... [more] OFT2011-79 OPE2011-205
pp.31-34
OPE, EMT, LQE, PN, IEE-EMT 2010-01-29
08:55		 Kyoto   Planar-type all optical switches using GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriers
Takahiro Kitada, Tomoya Takahashi, Ken Morita, Toshiro Isu (Univ. of Tokushima) PN2009-51 OPE2009-189 LQE2009-171		 A GaAs$\slash$AlAs multilayer cavity containing self-assembled InAs quantum dots (QDs) embedded in strain-relaxed In$_{0... [more] PN2009-51 OPE2009-189 LQE2009-171
pp.85-88
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