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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, ED, SDM | 2023-05-19 16:05 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Effect of Ge Epitaxial Buffer Layer on Solid Phase Growth of Ge on Si Satoki Furuya, Mikiya Kuzutani, Jose A. Piedra-Lorenzana, Takeshi Hizawa, Keisuke Yamane, Yasuhiko Ishikawa (Toyohashi Univ. Tech.)  ED2023-6 CPM2023-6 SDM2023-23 |
[more] | ED2023-6 CPM2023-6 SDM2023-23 pp.24-27 |
| CPM, ED, SDM | 2023-05-19 17:20 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
AlN film by reactive sputtering as a stressor for Ge photonic devices on Si Jose A. Piedra-Lorenzana, Shohei Kaneko, Takaaki Fukushima, Keisuke Yamane (Toyohashi Univ. Tec.), Junichi Fujikata (Tokushima Univ.), Yasuhiko Ishikawa (Toyohashi Univ. Tec.) ED2023-9 CPM2023-9 SDM2023-26 |
AlN deposited by reactive sputtering is studied as an external stressor for controlling the operating wavelength of near... [more] | ED2023-9 CPM2023-9 SDM2023-26 pp.36-39 |
| SDM, ED, CPM | 2019-05-17 12:00 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Study of Fabrication Process for Nitride-based Semiconductor Integrated Circuits
-- Threshold voltage control by Si-ion implantation -- Hiroshi Okada, Taichi Yokoyama, Kiyomasa Miwa, Keisuke Yamane, Akihiro Wakahara, Hiroto Sekiguchi (Toyohashi Tech.) ED2019-26 CPM2019-17 SDM2019-24 |
[more] | ED2019-26 CPM2019-17 SDM2019-24 pp.77-80 |
| CPM, LQE, ED | 2016-12-13 11:20 |
Kyoto | Kyoto University | Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip Kazuaki Tsuchiyama, Shu Utsuhomiya, Shota Nakagawa, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) ED2016-73 CPM2016-106 LQE2016-89 |
A Si/SiO2/GaN-LED structure was fabricated by surface activated bonding method, and a GaN-µLED driver circuit consi... [more] | ED2016-73 CPM2016-106 LQE2016-89 pp.79-83 |
| CPM, ED, SDM | 2016-05-19 15:00 |
Shizuoka | Shizuoka University, Hamamatsu campus (Joint Research Lab.) | Investigation of interface formation process between insulator and nitride-semiconductor for insulated gate transistors Yutaka Kondo, Masatoshi Shinohara, Tomoki Hikosaka, Makoto Baba (Toyohashi Univ. Technol.), Hiroshi Okada (EIIRIS, Toyohashi Univ. Technol.), Hiroto Sekiguchi, Keisuke Yamane, Akihiro Wakahara (Toyohashi Univ. Technol.) ED2016-17 CPM2016-5 SDM2016-22 |
[more] | ED2016-17 CPM2016-5 SDM2016-22 pp.19-23 |
| CPM, ED, SDM | 2016-05-20 11:55 |
Shizuoka | Shizuoka University, Hamamatsu campus (Joint Research Lab.) | Interface control for III-V/Si hetero-epitaxy Keisuke Yamane, Hiroto Sekiguchi (Toyohashi Tech.), Hiroshi Okada (EIIRIS), Akihiro Wakahara (Toyohashi Tech.) ED2016-26 CPM2016-14 SDM2016-31 |
This paper focuses a formation process of the first atomic layer on Si substrates for GaP/Si heteroepitaxy. It is clarif... [more] | ED2016-26 CPM2016-14 SDM2016-31 pp.61-65 |
| ED, CPM, SDM | 2015-05-28 15:15 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Control of N composition of GaAsN alloy grown by surface nitridation Noriyuki Urakami, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) ED2015-20 CPM2015-5 SDM2015-22 |
We researched growth conditions effect for N composition and luminescence property on dilute nitride GaAsN alloy grown b... [more] | ED2015-20 CPM2015-5 SDM2015-22 pp.21-26 |
| CPM, SDM, ED | 2011-05-19 13:50 |
Aichi | Nagoya Univ. (VBL) | Molecular beam epitaxy growth of AlGaPN alloys for optical confinement structure on Si substrate Keisuke Kumagai, Kohei Shoji, Tsuyoshi Kawai, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ.Tech.) ED2011-10 CPM2011-17 SDM2011-23 |
An AlP-based dilute nitride is one of the candidates for the cladding layer of laser structure in a Si-based optoelectro... [more] | ED2011-10 CPM2011-17 SDM2011-23 pp.49-54 |
| SDM, CPM, ED | 2010-05-14 14:20 |
Shizuoka | Shizuoka University (Hamamatsu Campus) | Fabrication of 1-bit counter circuit with LED indicator using Si/III-V-N/Si structure Seizo Tanaka, Kenta Noguchi, Keisuke Yamane, Yuki Deguchi, Yuzo Furukawa, Hiroshi Okada, Akihiro Wakahara, Hiroo Yonezu (Toyohashi Univ. of Tech.) ED2010-32 CPM2010-22 SDM2010-32 |
We fabricated of 1-bit counter circuit with light-emitting diode (LED) indicators using semiconductor process technology... [more] | ED2010-32 CPM2010-22 SDM2010-32 pp.81-85 |
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