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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2008-12-19
15:05
Miyagi Tohoku Univ. Ultrahigh-Speed Operations of InAlAs/In0.7Ga0.3As HEMTs under Cryogenic Conditions
Akira Endoh, Issei Watanabe (NICT), Keisuke Shinohara (NICT/HRL Labs.), Takashi Mimura (Fujitsu Labs.), Toshiaki Matsui (NICT) ED2008-187
DC and RF characteristics at 300 and 16 K of In0.52Al0.48As/In0.7Ga0.3As HEMTs were measured in the gate length Lg range... [more] ED2008-187
pp.15-20
ED, SDM, R 2006-11-24
15:15
Osaka Central Electric Club Effects of heterointerface flatness on device performance of InP-based HEMT -- Reduction of interface roughness scattering using (411)A-oriented substrate --
Issei Watanabe (NICT), Keisuke Shinohara (Rockwell), Takahiro Kitada (Univ.of Tokushima), Satoshi Shimomura (Ehimeiv.), Akira Endoh, Yoshimi Yamashita, Takashi Mimura (Fujitsu Labs.), Satoshi Hiyamizu (Osaka Univ./Nara National College of Tech.), Toshiaki Matsui (NICT)
 [more] R2006-35 ED2006-180 SDM2006-198
pp.21-25
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