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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
IE, IMQ, MVE, CQ
(Joint) [detail]
2016-03-07
14:25
Okinawa   Proposal of HpFP (High-Performance and Flexible Protocol) based on UDP for 10 Gbps LFN -- An Application for Network Quality Tester --
Ken T. Murata (NICT), Takamichi Mizuhara, Ayahiro Takagi, Keisuke Fukushima (Clealink), Kazunori Yamamoto, Yoshinori Nagaya (NICT), Kazuya Muranaga (SEC), Eizen Kimura (Ehime Univ.), Takatoshi Ikeda, Kaichiro Ikeda, Jin Tanaka (KDDI) CQ2015-124
Rapid increase of network bandwidth and emergence of new distributed applications for big-data, high-speed data transfer... [more] CQ2015-124
pp.95-100
NS, IN
(Joint)
2016-03-03
09:30
Miyazaki Phoenix Seagaia Resort HpFP: A new protocol for LFNs with packet-loss based on UDP -- A basic concept and detailed design of the protocol --
Ken T. Murata (NICT), Takamichi Mizuhara, Ayahiro Takagi, Keisuke Fukushima (Clealink), Kazunori Yamamoto, Yoshiaki Nagaya (NICT), Kazuya Muranaga (SEC), Eizen Kimura (Ehime Univ.) IN2015-109
For LFNs (Long-Fat Networks) with 10 Gbps or more and satellite networks with large latency, a variety of TCP-based prot... [more] IN2015-109
pp.7-12
ED, SDM 2007-06-25
15:55
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea Analysis of plasma etching damages in GaN by excess carrier lifetime measurements
Masashi Kato, Keisuke Fukushima, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.)
Gallium nitride (GaN) is a promising material for high power and high frequency devices, and the etching processes are n... [more]
SDM, ED, CPM 2007-05-24
14:50
Shizuoka Shizuoka Univ. Analysis of plasma etching damages and characterization of annealing effects on GaN by excess carrier lifetime measurements
Keisuke Fukushima, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs., Inc.)
Gallium nitride (GaN) is promising for high power and high frequency devices, and the etching processes is necessary in ... [more]
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