|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
IE, IMQ, MVE, CQ (Joint) [detail] |
2016-03-07 14:25 |
Okinawa |
|
Proposal of HpFP (High-Performance and Flexible Protocol) based on UDP for 10 Gbps LFN
-- An Application for Network Quality Tester -- Ken T. Murata (NICT), Takamichi Mizuhara, Ayahiro Takagi, Keisuke Fukushima (Clealink), Kazunori Yamamoto, Yoshinori Nagaya (NICT), Kazuya Muranaga (SEC), Eizen Kimura (Ehime Univ.), Takatoshi Ikeda, Kaichiro Ikeda, Jin Tanaka (KDDI) CQ2015-124 |
Rapid increase of network bandwidth and emergence of new distributed applications for big-data, high-speed data transfer... [more] |
CQ2015-124 pp.95-100 |
NS, IN (Joint) |
2016-03-03 09:30 |
Miyazaki |
Phoenix Seagaia Resort |
HpFP: A new protocol for LFNs with packet-loss based on UDP
-- A basic concept and detailed design of the protocol -- Ken T. Murata (NICT), Takamichi Mizuhara, Ayahiro Takagi, Keisuke Fukushima (Clealink), Kazunori Yamamoto, Yoshiaki Nagaya (NICT), Kazuya Muranaga (SEC), Eizen Kimura (Ehime Univ.) IN2015-109 |
For LFNs (Long-Fat Networks) with 10 Gbps or more and satellite networks with large latency, a variety of TCP-based prot... [more] |
IN2015-109 pp.7-12 |
ED, SDM |
2007-06-25 15:55 |
Overseas |
Commodore Hotel Gyeongju Chosun, Gyeongju, Korea |
Analysis of plasma etching damages in GaN by excess carrier lifetime measurements Masashi Kato, Keisuke Fukushima, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.) |
Gallium nitride (GaN) is a promising material for high power and high frequency devices, and the etching processes are n... [more] |
|
SDM, ED, CPM |
2007-05-24 14:50 |
Shizuoka |
Shizuoka Univ. |
Analysis of plasma etching damages and characterization of annealing effects on GaN by excess carrier lifetime measurements Keisuke Fukushima, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs., Inc.) |
Gallium nitride (GaN) is promising for high power and high frequency devices, and the etching processes is necessary in ... [more] |
|
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|