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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2012-11-16 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Molecular Dynamics Simulation of Heat Transport in Silicon Fin Structures Tomofumi Zushi (Waseda Univ./JST), Kenji Ohmori, Keisaku Yamada (Univ. of Tsukuba/JST), Takanobu Watanabe (Waseda Univ./JST) SDM2012-108 |
We perform a series of molecular dynamics (MD) simulations to investigate the transport process of heat in a hotspot reg... [more] |
SDM2012-108 pp.47-52 |
SDM |
2011-07-04 11:20 |
Aichi |
VBL, Nagoya Univ. |
Photoluminescence and interface properties of Si nanolayers and nanowires Yoko Sakurai, Kenji Ohmori, Keisaku Yamada (Univ. of Tsukuba), Kuniyuki Kakushima, Hiroshi Iwai (Tokyo Insti. Tech.), Kenji Shiraishi, Shintaro Nomura (Univ. of Tsukuba) SDM2011-56 |
Photoluminescence (PL) and interface properties of Si nanolayers and nanowires have been investigated. We have observed ... [more] |
SDM2011-56 pp.35-39 |
SDM |
2010-11-11 14:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2010-175 |
Effective work function of p-type gate electrodes on Hf-based high-k dielectrics is known to decrease after high tempera... [more] |
SDM2010-175 pp.23-28 |
SDM |
2010-06-22 10:20 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
An Analysis of Electrical Carrier Mobility of Silicon Nanowire FET Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet (Tokyo Inst. of Tech.), Kenji Ohmori (Waseda Univ.), Kenji Natori, Hiroshi Iwai (Tokyo Inst. of Tech.), Keisaku Yamada (Waseda Univ.) SDM2010-35 |
Silicon nanowire FET is expected to have high ION and low IOFF compared with planar FET, which results in low-power cons... [more] |
SDM2010-35 pp.11-16 |
SDM |
2008-12-05 13:15 |
Kyoto |
Kyoto University, Katsura Campus, A1-001 |
[Invited Talk]
Mechanisms of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks Heiji Watanabe, Yuki Kita, Takuji Hosoi, Takayoshi Shimura (Osaka Univ.), Kenji Shiraishi (Univ. of Tsukuba), Yasuo Nara (SELETE), Keisaku Yamada (Waseda Univ.) SDM2008-188 |
[more] |
SDM2008-188 pp.21-25 |
SDM |
2006-06-21 14:55 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Characterization of open volumes in high-k gate dielectrics by using monoenergetic positron beams Akira Uedono, T. Otsuka, K. Ito, K. Shiraishi, Kikuo Yamabe (Univ. of Tsukuba), Seiichi Miyazaki (Hiroshima Univ.), Naoto Umezawa, Toyohiro Chikyow (NIMS), Toshiyuki Ohdaira, R. Suzuki (AIST), Seiji Inumiya, Satoshi Kamiyama (Selete), Yasushi Akasaka (TEL), Yasuo Nara (Selete), Keisaku Yamada (Waseda Uni.) |
[more] |
SDM2006-46 pp.25-30 |
SDM |
2006-06-21 16:00 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Electric Properties on High-k Capacitors with Work-Function Tuned Metal Electrodes Kenji Ohmori (NIMS), Parhat Ahmet (TIT), Kenji Shiraishi (Univ. of Tsukuba), Heiji Watanabe (Osaka Univ.), Yasushi Akasaka (Selete), Kikuo Yamabe (Univ. of Tsukuba), Michiko Yoshitake (NIMS), K. S. Chang, M. L. Green (NIST), Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.), Toyohiro Chikyow (NIMS) |
[more] |
SDM2006-48 pp.37-41 |
SDM |
2006-06-22 13:10 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Interfacial reaction in HfO2/SiO2/Si(001) during O2 anneal observed by high-resolution RBS Zhao Ming, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura (Kyoto Univ.), Masashi Uematsu (NTT BRL), Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.) |
[more] |
SDM2006-59 pp.99-102 |
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