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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2012-11-16
13:00
Tokyo Kikai-Shinko-Kaikan Bldg Molecular Dynamics Simulation of Heat Transport in Silicon Fin Structures
Tomofumi Zushi (Waseda Univ./JST), Kenji Ohmori, Keisaku Yamada (Univ. of Tsukuba/JST), Takanobu Watanabe (Waseda Univ./JST) SDM2012-108
We perform a series of molecular dynamics (MD) simulations to investigate the transport process of heat in a hotspot reg... [more] SDM2012-108
pp.47-52
SDM 2011-07-04
11:20
Aichi VBL, Nagoya Univ. Photoluminescence and interface properties of Si nanolayers and nanowires
Yoko Sakurai, Kenji Ohmori, Keisaku Yamada (Univ. of Tsukuba), Kuniyuki Kakushima, Hiroshi Iwai (Tokyo Insti. Tech.), Kenji Shiraishi, Shintaro Nomura (Univ. of Tsukuba) SDM2011-56
Photoluminescence (PL) and interface properties of Si nanolayers and nanowires have been investigated. We have observed ... [more] SDM2011-56
pp.35-39
SDM 2010-11-11
14:40
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks
Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2010-175
Effective work function of p-type gate electrodes on Hf-based high-k dielectrics is known to decrease after high tempera... [more] SDM2010-175
pp.23-28
SDM 2010-06-22
10:20
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo An Analysis of Electrical Carrier Mobility of Silicon Nanowire FET
Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet (Tokyo Inst. of Tech.), Kenji Ohmori (Waseda Univ.), Kenji Natori, Hiroshi Iwai (Tokyo Inst. of Tech.), Keisaku Yamada (Waseda Univ.) SDM2010-35
Silicon nanowire FET is expected to have high ION and low IOFF compared with planar FET, which results in low-power cons... [more] SDM2010-35
pp.11-16
SDM 2008-12-05
13:15
Kyoto Kyoto University, Katsura Campus, A1-001 [Invited Talk] Mechanisms of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks
Heiji Watanabe, Yuki Kita, Takuji Hosoi, Takayoshi Shimura (Osaka Univ.), Kenji Shiraishi (Univ. of Tsukuba), Yasuo Nara (SELETE), Keisaku Yamada (Waseda Univ.) SDM2008-188
 [more] SDM2008-188
pp.21-25
SDM 2006-06-21
14:55
Hiroshima Faculty Club, Hiroshima Univ. Characterization of open volumes in high-k gate dielectrics by using monoenergetic positron beams
Akira Uedono, T. Otsuka, K. Ito, K. Shiraishi, Kikuo Yamabe (Univ. of Tsukuba), Seiichi Miyazaki (Hiroshima Univ.), Naoto Umezawa, Toyohiro Chikyow (NIMS), Toshiyuki Ohdaira, R. Suzuki (AIST), Seiji Inumiya, Satoshi Kamiyama (Selete), Yasushi Akasaka (TEL), Yasuo Nara (Selete), Keisaku Yamada (Waseda Uni.)
 [more] SDM2006-46
pp.25-30
SDM 2006-06-21
16:00
Hiroshima Faculty Club, Hiroshima Univ. Electric Properties on High-k Capacitors with Work-Function Tuned Metal Electrodes
Kenji Ohmori (NIMS), Parhat Ahmet (TIT), Kenji Shiraishi (Univ. of Tsukuba), Heiji Watanabe (Osaka Univ.), Yasushi Akasaka (Selete), Kikuo Yamabe (Univ. of Tsukuba), Michiko Yoshitake (NIMS), K. S. Chang, M. L. Green (NIST), Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.), Toyohiro Chikyow (NIMS)
 [more] SDM2006-48
pp.37-41
SDM 2006-06-22
13:10
Hiroshima Faculty Club, Hiroshima Univ. Interfacial reaction in HfO2/SiO2/Si(001) during O2 anneal observed by high-resolution RBS
Zhao Ming, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura (Kyoto Univ.), Masashi Uematsu (NTT BRL), Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.)
 [more] SDM2006-59
pp.99-102
 Results 1 - 8 of 8  /   
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