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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| MW, ED |
2021-01-29
14:25 |
Online |
Online |
Improved power-added-efficiency in GaN-HEMT on freestanding GaN substrate with reduced interface contamination
Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani, Shiro Ozaki (Fujitsu/Fujitsu Labs.), Yoshitaka Niida (Fujitsu Labs.), Yuichi Minoura (Fujitsu/Fujitsu Labs.), Masato Nishimori (Fujitsu), Naoya Okamoto (Fujitsu/Fujitsu Labs.), Masaru Sato, Norikazu Nakamura (Fujitsu Labs.), Keiji Watanabe (Fujitsu/Fujitsu Labs.)  ED2020-34 MW2020-87 |
[more] |
ED2020-34 MW2020-87
pp.34-37 |
| MW, ED |
2017-01-26
14:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Current Status of Millimeter-Wave GaN-HEMTs
Kozo Makiyama, Yoshitaka Niida, Shiro, Toshihiro Ohki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Youichi Kamata, Kazukiyo Jpshin, Keiji Watanabe (Fujitsu), Yasuyuki Miyamoto (Tokyo Tech.) ED2016-98 MW2016-174 |
[more] |
ED2016-98 MW2016-174
pp.13-16 |
| MW, ED |
2017-01-27
09:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes
Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.) ED2016-102 MW2016-178 |
Noise characteristics of zero-bias backward diodes for terahertz detectors were improved by using a p+-GaAs0.51Sb0.49/n-... [more] |
ED2016-102 MW2016-178
pp.29-33 |
| ED |
2015-07-24
14:05 |
Ishikawa |
IT Business Plaza Musashi 5F |
Low Damage Dry Etching for Recessed Gate AlGaN/GaN-HEMTs
Yuichi Minoura, Naoya Okamoto, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Yoichi Kamada, Keiji Watanabe (Fujitsu Labs.) ED2015-38 |
[more] |
ED2015-38
pp.9-13 |
| MW, ED |
2015-01-16
10:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
X-Ku wide-bandwidth GaN HEMT MMIC Amplifier with Small Deviation of Output Power and PAE
Yoshitaka Niida, Yoichi Kamada, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Naoya Okamoto, Masaru Sato, Satoshi Masuda, Keiji Watanabe (Fujitsu Lab.) ED2014-127 MW2014-191 |
[more] |
ED2014-127 MW2014-191
pp.59-63 |
| LQE, ED, CPM |
2011-11-17
16:45 |
Kyoto |
Katsura Hall，Kyoto Univ. |
Si Ion Implantated GaN-HEMT for Millimeter-Wave Applications
Masato Nishimori, Kozo Makiyama, Toshihiro Ohki, Atsushi Yamada, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Keiji Watanabe (Fujitsu Lab.) ED2011-85 CPM2011-134 LQE2011-108 |
[more] |
ED2011-85 CPM2011-134 LQE2011-108
pp.61-65 |
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