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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ICD 2015-08-24
15:00		 Kumamoto Kumamoto City [Invited Talk] Recent progress and challenges of high-mobility III-V/Ge CMOS technologies for low power LSI applications
Toshifumi Irisawa (AIST), Keiji Ikeda, Yuuichi Kamimuta, Minoru Oda, Tsutomu Tezuka (AIST/Toshiba), Tatsurou Maeda, Hiroyuki Ota, Kazuhiko Endo (AIST) SDM2015-63 ICD2015-32		  [more] SDM2015-63 ICD2015-32
pp.31-36
SDM 2014-01-29
10:25		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Regrowth
Toshifumi Irisawa, Minoru Oda, Keiji Ikeda, Yoshihiko Moriyama, Eiko Mieda, Wipakorn. Jevasuwan, Tatsuro Maeda (AIST), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Yasuyuki Miyamoto (Tokyo Inst. of Tech.), Tsutomu Tezuka (AIST) SDM2013-137		 riangular In0.53Ga0.47As-OI nMOSFETs with smooth (111)B side surfaces on Si have been successfully fabricated. The trian... [more] SDM2013-137
pp.9-12
ICD, SDM 2008-07-18
15:30		 Tokyo Kikai-Shinko-Kaikan Bldg. High Performance Sub-35 nm Bulk CMOS with Hybrid Gate Structures of NMOS; Dopant Confinement Layer (DCL) / PMOS; Ni-FUSI by Using Flash Lamp Anneal (FLA) in Ni-Silicidation -- Hybrid Gate Structures --
Hiroyuki Ohta (Fujitsu Lab.), Kazuo Kawamura (FML), Hidenobu Fukutome (Fujitsu Lab.), Mitsugu Tajima, Ken-ichi Okabe (FML), Keiji Ikeda, Kimihiko Hosaka, Yoichi Momiyama, Shigeo Satoh, Toshihiro Sugii (Fujitsu Lab.) SDM2008-148 ICD2008-58		 We applied Flash Lamp Annealing (FLA) in Ni-silicidation to our developed Dopant Confinement Layer (DCL) structure for t... [more] SDM2008-148 ICD2008-58
pp.115-120
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