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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2016-10-26
Miyagi Niche, Tohoku Univ. Formation technology of Flat Surface after Selective Epitaxial Growth on Ion-Implanted (100) Oriented Thin SOI Wafers
Kiichi Furukawa, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Shigetoshi Sugawa (Tohoku Univ.), Daisuke Suzuki, Yoichiro Chiba, Katsutoshi Ishii, Akira Shimizu, Kazuhide Hasebe (Tokyo Electron Tohoku) SDM2016-70
 [more] SDM2016-70
EID, SDM 2015-12-14
Kyoto Ryukoku University, Avanti Kyoto Hall Fabrication of FinFET Structure with High Selectivity Etching Using Newly Developed SiNx Etch Gas
Takashi Kojiri (Tohoku Univ./ZEON), Tomoyuki Suwa, Keiichi Hashimoto, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) EID2015-9 SDM2015-92
We evaluated the properties of newly developed SiNx etch gas (SSY525). The gas indicated high selectivity as 30 ~ 60 for... [more] EID2015-9 SDM2015-92
SDM 2015-10-30
Miyagi Niche, Tohoku Univ. A Device Simulation Study on Tunneling and Diffusion Current Hybrid MOSFET
Kiichi Furukawa, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Takashi Kojiri, Shigetoshi Sugawa (Tohoku Univ.) SDM2015-77
 [more] SDM2015-77
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