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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2013-04-19
11:35
Miyagi   Formation of qualified epitaxial graphene on 6H-SiC(0001) by high temperature annealing in Ar ambient
Kazutoshi Funakubo, Shuya Inomata, Ryo Inomata, Goon-Ho Park (Tohoku Univ.), Masato Kotsugi (JASRI), Hirokazu Fukidome, Maki Suemitsu (Tohoku Univ.)
Recently, graphene has attracted increasing attention as a new FET channel material to substitute Si. However, the field... [more] ED2013-15
pp.59-62
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