|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD |
2018-04-20 11:10 |
Tokyo |
|
[Invited Talk]
A 512Gb 3b/Cell 3D Flash Memory on a 96-Word-Line-Layer Technology Hiroshi Maejima, Kazushige Kanda, Susumu Fujimura, Teruo Takagiwa, Susumu Ozawa, Jumpei Sato, Yoshihiko Shindo, Manabu Sato, Naoaki Kanagawa, Junji Musha, Satoshi Inoue, Katsuaki Sakurai, Toshifumi Hashimoto (TMC), Hao Nguyen, Ken Cheah, Hiroshi Sugawara, Seungpil Lee (WDC), Toshiki Hisada, Tetsuya Kaneko, Hiroshi Nakamura (TMC) ICD2018-10 |
A 512Gb 3b/cell flash has been developed on a 96-WL-layer BiCS FLASH technology. This work implements three key technolo... [more] |
ICD2018-10 pp.39-44 |
ICD |
2012-04-23 12:30 |
Iwate |
Seion-so, Tsunagi Hot Spring (Iwate) |
[Invited Talk]
A 19nm 112.8mm2 64Gb Multi-level(2bit/cell) Flash Memory with 400Mb/s/pin 1.8V Toggle Mode Interface Noboru Shibata, Kazushige Kanda, Toshiki Hisada, Katsuaki Isobe, Manabu Sato, Yuui Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, Kazuko Inuzuka, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, Jiyun Nakai (Toshiba), Teruhiko Kamei (SanDisk) ICD2012-1 |
A 64Gb MLC NAND flash memory on 19nm CMOS technology has been developed. By adopting One-Sided All-Bit-Line architecture... [more] |
ICD2012-1 pp.1-5 |
ICD |
2011-04-18 10:50 |
Hyogo |
Kobe University Takigawa Memorial Hall |
[Invited Talk]
A Technical Trend and Embedded DRAM Technology for High-Performance NAND Flash Memories Daisaburo Takashima, Mitsuhiro Noguchi, Noboru Shibata, Kazushige Kanda, Hiroshi Sukegawa, Shuso Fujii (Toshiba) ICD2011-2 |
In this paper, first, the technical trend for high-bandwidth NAND flash memories is introduced. Second, an embedded DRAM... [more] |
ICD2011-2 pp.7-12 |
ICD |
2008-04-17 13:55 |
Tokyo |
|
A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology Dai Nakamura, Kazushige Kanda, Masaru Koyanagi, Toshio Yamamura, Koji Hosono, Masahiro Yoshihara (Toshiba), Toru Miwa, Yosuke Kato (Sandisk), Alex Mak, Siu Lung Chan, Frank Tsai, Raul Cernea, Binh Le (Sandisk Corp.), Eiichi Makino, Takashi Taira (Toshiba) ICD2008-5 |
A 120mm2 16Gb MLC NAND flash memory is developed using 43nm CMOS. The area is reduced by more than 9% by applying a 66 N... [more] |
ICD2008-5 pp.25-30 |
ICD |
2008-04-17 15:20 |
Tokyo |
|
[Panel Discussion]
Probing into the Potential of the Future Flash
-- An Impact of Flash Revolution -- Kazuhiko Kajigaya (Elpida), Naoharu Shinozaki (Spansion), Toshio Kakihara (HGST), Kazushige Kanda (Toshiba), Michio Kobayashi (Spansion), Makoto Saen (Hitachi), Tadahiko Sugibayashi (NEC), Ken Takeuchi (Tokyo Univ.), Hisao Tsukazawa (Toshiba) ICD2008-7 |
Flash-memory is now the driving force for the semiconductor process technology and trying to expand its new market with ... [more] |
ICD2008-7 pp.37-38 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|