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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2018-04-20
11:10
Tokyo   [Invited Talk] A 512Gb 3b/Cell 3D Flash Memory on a 96-Word-Line-Layer Technology
Hiroshi Maejima, Kazushige Kanda, Susumu Fujimura, Teruo Takagiwa, Susumu Ozawa, Jumpei Sato, Yoshihiko Shindo, Manabu Sato, Naoaki Kanagawa, Junji Musha, Satoshi Inoue, Katsuaki Sakurai, Toshifumi Hashimoto (TMC), Hao Nguyen, Ken Cheah, Hiroshi Sugawara, Seungpil Lee (WDC), Toshiki Hisada, Tetsuya Kaneko, Hiroshi Nakamura (TMC) ICD2018-10
A 512Gb 3b/cell flash has been developed on a 96-WL-layer BiCS FLASH technology. This work implements three key technolo... [more] ICD2018-10
pp.39-44
ICD 2012-04-23
12:30
Iwate Seion-so, Tsunagi Hot Spring (Iwate) [Invited Talk] A 19nm 112.8mm2 64Gb Multi-level(2bit/cell) Flash Memory with 400Mb/s/pin 1.8V Toggle Mode Interface
Noboru Shibata, Kazushige Kanda, Toshiki Hisada, Katsuaki Isobe, Manabu Sato, Yuui Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, Kazuko Inuzuka, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, Jiyun Nakai (Toshiba), Teruhiko Kamei (SanDisk) ICD2012-1
A 64Gb MLC NAND flash memory on 19nm CMOS technology has been developed. By adopting One-Sided All-Bit-Line architecture... [more] ICD2012-1
pp.1-5
ICD 2011-04-18
10:50
Hyogo Kobe University Takigawa Memorial Hall [Invited Talk] A Technical Trend and Embedded DRAM Technology for High-Performance NAND Flash Memories
Daisaburo Takashima, Mitsuhiro Noguchi, Noboru Shibata, Kazushige Kanda, Hiroshi Sukegawa, Shuso Fujii (Toshiba) ICD2011-2
In this paper, first, the technical trend for high-bandwidth NAND flash memories is introduced. Second, an embedded DRAM... [more] ICD2011-2
pp.7-12
ICD 2008-04-17
13:55
Tokyo   A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology
Dai Nakamura, Kazushige Kanda, Masaru Koyanagi, Toshio Yamamura, Koji Hosono, Masahiro Yoshihara (Toshiba), Toru Miwa, Yosuke Kato (Sandisk), Alex Mak, Siu Lung Chan, Frank Tsai, Raul Cernea, Binh Le (Sandisk Corp.), Eiichi Makino, Takashi Taira (Toshiba) ICD2008-5
A 120mm2 16Gb MLC NAND flash memory is developed using 43nm CMOS. The area is reduced by more than 9% by applying a 66 N... [more] ICD2008-5
pp.25-30
ICD 2008-04-17
15:20
Tokyo   [Panel Discussion] Probing into the Potential of the Future Flash -- An Impact of Flash Revolution --
Kazuhiko Kajigaya (Elpida), Naoharu Shinozaki (Spansion), Toshio Kakihara (HGST), Kazushige Kanda (Toshiba), Michio Kobayashi (Spansion), Makoto Saen (Hitachi), Tadahiko Sugibayashi (NEC), Ken Takeuchi (Tokyo Univ.), Hisao Tsukazawa (Toshiba) ICD2008-7
Flash-memory is now the driving force for the semiconductor process technology and trying to expand its new market with ... [more] ICD2008-7
pp.37-38
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