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 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2013-01-18
13:25		 Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of Lag Phenomena, Current Collapse and Breakdown Characteristics in Source-Field-Plate AlGaN/GaN HEMTs
Hideyuki Hanawa, Hiraku Onodera, Kazushige Horio (Shibaura Inst. Tech.) ED2012-123 MW2012-153		 Two-dimensional analysis of lag phenomena, current collapse and breakdown voltages in source-field-plate AlGaN/GaN HEMTs... [more] ED2012-123 MW2012-153
pp.57-62
ED, MW 2012-01-12
12:50		 Tokyo Kikai-Shinko-Kaikan Bldg Analusis of Buffer-Impurity and Field-Plate Effects on Breakdown Performance in Small-Sized AlGaN/GaN HEMTs
Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2011-133 MW2011-156		 In this work, we perform two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN HEMTs with a sho... [more] ED2011-133 MW2011-156
pp.81-85
MW, ED 2011-01-14
09:55		 Tokyo Kikai-Shinko-Kaikan Bldg. Two-Dimensional Analysis of Backside-Electrode and Gate-Field-Plate Effects on Buffer-Related Current Collapse in AlGaN/GaN HEMTs
Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2010-183 MW2010-143		 Two-dimensional transient analysis of gate-field-plate AlGaN/GaN HEMTs with a backside electrode is performed in which a... [more] ED2010-183 MW2010-143
pp.45-50
LQE, ED, CPM 2008-11-28
10:50		 Aichi Nagoya Institute of Technology Two-Dimensional Analysis of Field-Plate Effects on Buffer-Related Lag Phenomena and Current Collapse in AlGaN/GaN HEMTs
Atsushi Nakajima, Keiichi Itagaki, Kazushige Horio (Shibaura Inst. Tech.) ED2008-173 CPM2008-122 LQE2008-117		  [more] ED2008-173 CPM2008-122 LQE2008-117
pp.103-108
ED, MW 2008-01-16
13:00		 Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of Field-Plate Effects on Buffer-Related Current Collapse in GaN-Based FETs
Keiichi Itagaki, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2007-206 MW2007-137		  [more] ED2007-206 MW2007-137
pp.1-5
CPM, ED, LQE 2007-10-12
10:50		 Fukui Fukui Univ. Analysis of Buffer-Related Slow Current Transients and Current Collapse in AlGaN/GaN HEMTs
Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2007-169 CPM2007-95 LQE2007-70		 Two-dimensional transient analyses of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are consid... [more] ED2007-169 CPM2007-95 LQE2007-70
pp.67-72
ED, MW 2006-01-19
10:20		 Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of Slow Current Transients and Current Collapse in GaN FETs
Hiroki Takayanagi, Keiichi Itagaki, Hiroyuki Nakano, Kazushige Horio (Shibaura Inst. Tech.) 		Two-dimensional transient analyses of GaN MESFETs are performed in which a deep donor and a deep acceptor in a semi-insu... [more] ED2005-199 MW2005-153
pp.1-6
 Results 1 - 7 of 7  /   
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