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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, EID 2017-12-22
10:45
Kyoto Kyoto University Conduction mechanisms in heavily Al-doped 4H-SiC epilayers -- Dependencies of resistivity on Al concentration and temperature --
Shinji Ozawa, Akinobu Takeshita, TAtsuya imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazuoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-12 SDM2017-73
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] EID2017-12 SDM2017-73
pp.5-8
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