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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 13 of 13  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, SDM 2018-05-24
16:15
Aichi Toyohashi Univ. of Tech. (VBL) Reduction of threading dislocation density in Ge layers on Si by introducing tunnel-shaped voids
Motoki Yako (Univ. of Tokyo), Yasuhiko Ishikawa (Toyohashi Univ. of Tech.), Kazumi Wada (Massachusetts Inst. Tech.) ED2018-20 CPM2018-7 SDM2018-15
 [more] ED2018-20 CPM2018-7 SDM2018-15
pp.29-32
OFT, OCS, OPE
(Joint) [detail]
2016-02-19
09:00
Okinawa Okinawa Univ. High-performance Ge-on-Si Near-infrared Photodiodes
Yasuhiko Ishikawa, Yuji Miyasaka, Kazuki Ito, Sho Nagatomo, Kazumi Wada (Univ. Tokyo) OCS2015-107 OFT2015-62 OPE2015-227
Near-infrared photodiodes for Si photonics are fabricated using Ge epitaxial layers on Si grown by
ultrahigh-vacuum che... [more]
OCS2015-107 OFT2015-62 OPE2015-227
pp.39-42(OCS), pp.39-42(OFT), pp.65-68(OPE)
MWP, EMT, PN, LQE, OPE, EST, IEE-EMT [detail] 2014-01-23
17:40
Kyoto Doshisha University Si-Ge-Silica monolithic photonic integration platform and application to a WDM receiver
Hidetaka Nishi, Tatsuro Hiraki, Tai Tsuchizawa, Rai Kou, Kotaro Takeda (NTT), Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo), Hiroshi Fukuda, Koji Yamada, Tsuyoshi Yamamoto (NTT) PN2013-60 OPE2013-174 LQE2013-160 EST2013-109 MWP2013-80
 [more] PN2013-60 OPE2013-174 LQE2013-160 EST2013-109 MWP2013-80
pp.141-146
OPE 2013-12-20
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. Characteristics and analysis of germanium waveguide photodiode under high voltage driving
Kotaro Takeda, Tatsuro Hiraki, Tai Tsuchizawa, Hidetaka Nishi, Rai Kou, Hiroshi Fukuda, Tsuyoshi Yamamoto (NTT), Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo), Koji Yamada (NTT) OPE2013-140
We demonstrate a responsivity of germanium photodiode (GePD) with a silicon waveguide in the C- and L-band under high-vo... [more] OPE2013-140
pp.13-18
LQE, CPM, EMD, OPE, R 2012-08-24
13:10
Miyagi Tohoku Univ. Monolithic integration of silica AWG and Ge PDs on Si photonic platform for one-chip WDM receiver
Hidetaka Nishi, Tai Tsuchizawa, Rai Kou, Tatsuro Hiraki, Hiroshi Fukuda (NTT), Yasuhiko Ishikawa, Kazumi Wada (U. of Tokyo), Koji Yamada (NTT) R2012-43 EMD2012-49 CPM2012-74 OPE2012-81 LQE2012-47
 [more] R2012-43 EMD2012-49 CPM2012-74 OPE2012-81 LQE2012-47
pp.107-110
OPE, EMT, LQE, PN, IEE-EMT [detail] 2011-01-27
15:45
Osaka Osaka Univ. Fast Optical Power Stabilization using a Germanium Photodiode and a Silicon Variable Optical Attenuator Integrated on a Silicon Photonic Platform
Koji Yamada, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Rai Kou, Sungbong Park (NTT), Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo), Seiichi Itabashi (NTT) PN2010-36 OPE2010-149 LQE2010-134
Fast optical power stabilization is demonstrated using a germanium photodiode and a silicon variable optical attenuator ... [more] PN2010-36 OPE2010-149 LQE2010-134
pp.53-56
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2010-11-30
17:15
Fukuoka Kyushu University [Invited Talk] Photonic-electronic Convergence Technology Based on Silicon -- Integration of photomic and electric circuits utilizing Siliconphotonics --
Seiichi Itabashi, Tai Tsuchizawa, Koji Yamada, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Rei Takahashi (NTT Corp.), Kazumi Wada, Yasuhiko Ishikawa (Univ. of Tokyo.) VLD2010-71 DC2010-38
Photonic-electronic convergence technology based on silicon is presented. Siliconphotonics technology which is aiming at... [more] VLD2010-71 DC2010-38
pp.105-106
OPE 2009-12-18
16:40
Tokyo Kikai-Shinko-Kaikan Bldg. Synchronized Operation of a Monolithically-Integrated Si VOA and Ge Photodiode
Sungbong Park, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada (NTT), Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo.), Seiichi Itabashi (NTT) OPE2009-169
We have investigated monolithically integrated Ge p-i-n photodiodes and Si variable optical attenuators (VOAs). The Ge p... [more] OPE2009-169
pp.47-52
PN, OPE, EMT, LQE 2009-01-29
09:20
Kyoto Kyoto Institute Technology (Matsugasaki Campus) Reverse current reduction of Ge pin photodiodes on Si without post-growth annealing
Sungbong Park, Shinya Takita, Yasuhiko Ishikawa, Jiro Osaka, Kazumi Wada (Univ. of Tokyo) PN2008-44 OPE2008-147 LQE2008-144
 [more] PN2008-44 OPE2008-147 LQE2008-144
pp.11-15
OPE 2008-12-19
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. Si quantum wells by thermal oxidation and Er-doped structures
Ryusuke Osaki, Yasuhiko Ishikawa (Univ. of Tokyo), Yoshifumi Yamashita, Yoichi Kamiura (Okayama Univ.), Kazumi Wada (Univ. of Tokyo) OPE2008-138
Er-doped Si has attracted much attention as a possible candidate for 1.5 μm light-emitting material in Silicon photonics... [more] OPE2008-138
pp.11-16
OPE 2007-12-14
15:40
Tokyo Kikai-Shinko-Kaikan Bldg. PL evaluation of Si Ring Resonators
Shiyun Lin, Yosuke Kobayashi, Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo)
The photoluminescence enhancements in isolated Si microring resonators fabricated on a Si-on-insulator (SOI) wafer is ob... [more] OPE2007-141
pp.31-35
OPE 2007-12-14
16:05
Tokyo Kikai-Shinko-Kaikan Bldg. Concentric-Ring Resonator Optical Buffers
Lim Peng Huei (Univ. of Tokyo), Desmond Lim (Nanyang Technological Univ.), Kazumi Wada (Univ. of Tokyo)
We propose a novel concentric-ring optical buffer structure which can at least double the theoretical time delay-bandwid... [more] OPE2007-142
pp.37-40
OPE 2007-12-14
16:55
Tokyo Kikai-Shinko-Kaikan Bldg. Spectral responsivity of Ge pin photodiodes on silicon-on-insulator via selective epitaxial growth
Sungbong Park, Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo), Tai Tsuchizawa, Toshifumi Watanabe, Koji Yamada, Seiichi Itabashi (NTT)
We investigated the strain effect on spectral responsivity of Ge photodiodes. Ge vertical pin photodiodes with the size ... [more] OPE2007-144
pp.47-51
 Results 1 - 13 of 13  /   
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