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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, EID 2014-12-12
10:30		 Kyoto Kyoto University Activation of B+ or B10H14+ Implanted Silicon by Soft X-ray Irradiation
Akira Heya, Fumito Kusakabe, Shota Hirano, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo) EID2014-15 SDM2014-110		  [more] EID2014-15 SDM2014-110
pp.13-16
SDM, EID 2014-12-12
16:00		 Kyoto Kyoto University Formation of nc-Si in SiOx by Soft X-ray Irradiation
Fumito Kusakabe, Shota Hirano, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Takayasu Mochizuki, Shuji Miyamoto (Univ. of Hyogo), Kazuyuki Kohama, Kazuhiro Ito (Osaka Univ.) EID2014-32 SDM2014-127		  [more] EID2014-32 SDM2014-127
pp.99-102
SDM 2013-12-13
13:30		 Nara NAIST Low-Temperature Crystallization of Thin-Film Semiconductor by Soft X-ray Irradiation -- Photon Energy Dependence and TEM Observation of SiGe Multilayer Film --
Fumito Kusakabe, Yuki Maruyama, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Takayasu Mochizuki (Univ. of Hyogo), Kazuhiro Ito, Makoto Takahashi (Osaka Univ.) SDM2013-126		 We examined dependence of the crystallization for a-Ge and a-SiGe on the photon energy. In the storage-ring current of 7... [more] SDM2013-126
pp.61-66
SDM 2013-12-13
13:50		 Nara NAIST Development of Low-Temperature Activation of Boron in Silicon Using Soft X-ray Source
Akira Heya, Fumito Kusakabe, Yuki Maruyama, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo), Takashi Noguchi (Univ. of the Ryukyus) SDM2013-127		 To realize a ultrathin junction with 10nm depth, a novel activation method of B dopant using soft X-ray undulator was ex... [more] SDM2013-127
pp.67-72
SDM, OME 2012-04-28
09:00		 Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. [Invited Talk] Low-Temperature Crystallization of Amorphous Semiconductor Films Using Only Soft X-ray Irradiation
Naoto Matsuo, Akira Heya, Takayasu Mochizuki, Shuji Miyamoto, Kazuhiro Kanda (Univ Hyogo) SDM2012-11 OME2012-11		  [more] SDM2012-11 OME2012-11
pp.49-54
SDM 2011-12-16
16:00		 Nara NAIST Development of Low-Temperature Crystallization Method of Thin Film Semiconductor Using Soft X-ray Source
Akira Heya, Yuki Nonomura, Shota Kino, Naoto Matsuo (Univ. Hyogo), Sho Amano (LASTI Univ. Hyogo), Shuji Miyamoto, Kazuhiro Kanda, Takayasu Mochizuki (Univ. Hyogo), Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2011-145		 It is necessary two processes (crystal-nucleus formation and crystal grain growth) for crystallization. In general, the ... [more] SDM2011-145
pp.71-76
SDM 2008-12-05
11:30		 Kyoto Kyoto University, Katsura Campus, A1-001 Si atom movement in a-Si film by soft X-ray excitation using undulator source
Yasuyuki Takanashi, Akira Heya, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo) SDM2008-187		 We investigated the characteristics of a-Si film with thicknesses of 1 and 50 nm those were irradiated by soft X-ray fro... [more] SDM2008-187
pp.17-20
 Results 1 - 7 of 7  /   
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