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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| EID, SDM, ITE-IDY [detail] | 2018-12-25 13:15 |
Kyoto | Effects of SiOx Capping Film on Crystallization of Ge Film for Flash Lamp Annealing (Ⅱ) Yoshiki akita, Naoto Matsuo (Univ. of Hyogo), Kazuyuki Kohama, Kazuhiro Ito (Osaka Univ.)  EID2018-5 SDM2018-78 |
We examined the effect of SiOx capping film on Ge films in FLA. The crystallinity was different between SPC and LPC. At ... [more] | EID2018-5 SDM2018-78 pp.17-20 |
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| SDM, EID | 2017-12-22 16:00 |
Kyoto | Kyoto University | Effect of SiOx capping film on crystallization of Ge film by flash lamp annealing Naoki Yoshioka, Yoshiki Akita, Akira Heya, Naoto Matsuo (Univ of Hyogo), Kazuyuki Kohama, Kazuhiro Itou (Osaka Univ) EID2017-26 SDM2017-87 |
[more] | EID2017-26 SDM2017-87 pp.77-80 |
| ED, LQE, CPM | 2015-11-27 11:40 |
Osaka | Osaka City University Media Center | Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate Yuya Yamaoka (TNSC), Kazuhiro Ito (NITech), Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto (TNSC), Takashi Egawa (NITech) ED2015-83 CPM2015-118 LQE2015-115 |
In this study, two types of single AlN on Si substrates were grown using different growth conditions. A scanning electro... [more] | ED2015-83 CPM2015-118 LQE2015-115 pp.77-80 |
| SDM, EID | 2014-12-12 16:00 |
Kyoto | Kyoto University | Formation of nc-Si in SiOx by Soft X-ray Irradiation Fumito Kusakabe, Shota Hirano, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Takayasu Mochizuki, Shuji Miyamoto (Univ. of Hyogo), Kazuyuki Kohama, Kazuhiro Ito (Osaka Univ.) EID2014-32 SDM2014-127 |
[more] | EID2014-32 SDM2014-127 pp.99-102 |
| SDM | 2014-06-19 11:45 |
Aichi | VBL, Nagoya Univ. | Characteristics of charge trap flash memory with Al2O3/(Ta/Nb)Ox/Al2O3 multi-layer by ALD method Toshihide Nabatame, Akihiko Ohi (NIMS), Kazuhiro Ito, Makoto Takahashi (Osaka Univ.), Toyohiro Chikyow (NIMS) SDM2014-49 |
We studied characteristics of the p-Si/SiO2/Al2O3-TL/(Ta/Nb)Ox-CTL/Al2O3-BL/Pt capacitors, fabricated by using ALD at 20... [more] | SDM2014-49 pp.31-35 |
| SDM | 2013-12-13 13:30 |
Nara | NAIST | Low-Temperature Crystallization of Thin-Film Semiconductor by Soft X-ray Irradiation
-- Photon Energy Dependence and TEM Observation of SiGe Multilayer Film -- Fumito Kusakabe, Yuki Maruyama, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Takayasu Mochizuki (Univ. of Hyogo), Kazuhiro Ito, Makoto Takahashi (Osaka Univ.) SDM2013-126 |
We examined dependence of the crystallization for a-Ge and a-SiGe on the photon energy. In the storage-ring current of 7... [more] | SDM2013-126 pp.61-66 |
| SDM | 2011-02-07 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Dependence of Ti-Based Self-Formed Barrier Structure on Dielectric-Layer Composition Kazuyuki Kohama, Kazuhiro Ito, Yutaka Sonobayashi (Kyoto Univ.), Kazuyuki Ohmori, Kenichi Mori, Kazuyoshi Maekawa (Renesas), Yasuharu Shirai (Kyoto Univ.), Masanori Murakami (The Ritsumeikan) SDM2010-221 |
Ti-based self-formed barrier layer using Cu(Ti) alloy seed applied to 45 nm-node dual-damascene interconnects was report... [more] | SDM2010-221 pp.31-35 |
| PRMU, HIP | 2010-03-16 09:20 |
Kagoshima | Kagoshima Univ. | Contribution of Facial Movements on Speech Cognition Kazuhiro Ito (Chiba Inst. of Tech.), Kaname Mochizuki (Teikyo Univ.), Hitoshi Ohnishi (The Open Univ. of Japan), Naoto Nakamura (Chiba Inst. of Tech.) PRMU2009-278 HIP2009-163 |
Hearing and vision are affecting each other, visual information may contribute to auditory information when we recognize... [more] | PRMU2009-278 HIP2009-163 pp.265-268 |
| SDM | 2010-02-05 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Performance of Cu Dual-Damascene Interconnects Using a Thin Ti-Based Self-Formed Barrier Layer for 28-nm Node and Beyond K. Ohmori, K. Mori, K. Maekawa (Renesas), Kazuyuki Kohama, Kazuhiro Ito (Kyoto Univ.), T. Ohnishi, M. Mizuno (KOBE STEEL), K. Asai (Renesas), M. Murakami (Ritsumeikan Trust), Hiroshi Miyatake (Renesas) SDM2009-188 |
With continuous shrinkage of advanced ULSIs, the impact of line resistance on the devices has become more and more serio... [more] | SDM2009-188 pp.37-41 |
| ITE-IDY, EID, IEIJ-SSL, IEE-EDD | 2010-01-29 12:00 |
Fukuoka | Kyusyu Univ. (Chikushi Campus) | C12A7 electride: a new cathode material for CCFL LCD backlights, and its glow discharge characteristics Satoru Watanabe, Kazuhiro Ito, Naomichi Miyakawa, Setsuro Ito (Asahi Glass Co.,Ltd.), Shigeo Mikoshiba (Univ. of Electro-Comm.) EID2009-79 |
C12A7 electride, a new microporous compound having a work function of 2.4 eV, was examined as a candidate for the cathod... [more] | EID2009-79 pp.131-132 |
| CQ | 2009-09-11 09:30 |
Gifu | Takayama Culture Center | Contribution of Visual Information to Speech Cognition Kazuhiro Ito (Chiba Inst. of Tech), Kaname Mochizuki (Teikyo Univ.), Hitoshi Ohnishi (The Open Univ. of Japan), Naoto Nakamura (Chiba Inst. of Tech) CQ2009-34 |
When we talk with somebody, not only the voice of speaker but also his or her facial expressions play an important role ... [more] | CQ2009-34 pp.49-52 |
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