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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 4 of 4  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2015-04-17
09:55
Miyagi Laboratory for Nanoelectronics and Spintronics Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
Kensaku Kanomata, Hisashi Ohba, P. Pungboon Pansila, Bashir Ahmmad Arima, Shigeru Kubota, Kazuhiro Hirahara, Fumihiko Hirose (Yamagata Univ.) ED2015-11
Room-temperature atomic layer deposition (ALD) of hafnium dioxide is developed using tetrakis(ethylmethylamino)hafnium (... [more] ED2015-11
pp.53-58
CPM 2014-09-05
12:20
Yamagata The 100th Anniversary Hall, Yamagata University Anti-corrosion films prepared by RT atomic layer deposition
Fumihiko Hirose, Kensaku Kanomata, Hisashi Ohba, Bashir Ahmmad, Shigeru Kubota, Kazuhiro Hirahara (Yamagata Univ.) CPM2014-89
 [more] CPM2014-89
pp.75-77
ED 2014-04-18
09:50
Yamagata The 100th Anniversary Hall, Yamagata University Fabrication of hafnium oxide using room-temperature atomic layer deposition
Kensaku Kanomata, Hisashi Ohba, Bashil Ahmmad Arima, Shigeru Kubota, Kazuhiro Hirahara, Fumihiko Hirose (Yamagata Univ.) ED2014-13
Room-temperature atomic layer deposition (ALD) of hafnium dioxide is developed using tetrakis(ethylmethylamino)hafnium (... [more] ED2014-13
pp.51-54
CPM 2013-10-25
09:30
Niigata Niigata Univ. Satellite Campus TOKIMEITO Fabrication of titanium oxide using plasma excited atomic layer deposition
Kensaku Kanomata, Hisashi Ohba, Katsuaki Momiyama, Takahiko Suzuki, Bashil Ahmmad, Shigeru Kubota, Kazuhiro Hirahara, Fumihiko Hirose (Yamagata Univ.) CPM2013-102
Room-temperature atomic layer deposition (ALD) of titanium dioxide is developed using tetrakis(dimethylamino)titanium (T... [more] CPM2013-102
pp.45-48
 Results 1 - 4 of 4  /   
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