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SDM 2019-06-21
16:45		 Aichi Nagoya Univ. VBL3F Chemical Structure and Electronic States of HfSiOx/GaN(0001)
Akio Ohta, Katunori Makihara (Nagoya Univ.), Toshihide Nabatame (NIMS), Koji Shiozaki, Seiichi Miyazaki (Nagoya Univ.) SDM2019-35		 A HfSiOx layer with different Hf/(Hf+Si) composition ratio was formed on wet chemically-cleaned GaN(0001) using ALD, and... [more] SDM2019-35
pp.47-51
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